Power Innovations TISP1082 Datasheet
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
TISP1082
● Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
V
VV
(Z)
DEVICE
‘1082 - 58 - 82
(BO)
V
● Planar Passivated Junctions
Low Off-State Current < 10 µA
● Rated for International Surge Wave Shapes
I
WAVE SHAPE STANDARD
8/20 µs ANSI C62.41 150
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45
0.2/310 µs RLM 88 38
FTZ R12
10/700 µs
10/1000 µs REA PE-60 50
VDE 0433
CCITT IX K17/K20
TSP
A
50
50
50
● UL Recognized, E132482
description
The TISP1082 is designed specifically for
telephone line card protection against lightning
and transients induced by a.c. power lines.
These devices will supress voltage transients
between terminals A and C, B and C, and A and
B.
Negative transients are initially clipped by zener
action until the voltage rises to the breakover
level, which causes the device to crowbar. The
high crowbar holding current prevents d.c.
latchup as the transient subsides. Positive
transients are clipped by diode action.
TO-220 PACKAGE
(TOP VIEW)
A(T)
C(G)
B(R)
Pin 2 is in electrical contact with the mounting base.
1
2
3
device symbol
A(T) B(R)
C(G)
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
MDXXANA
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP1082
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 150
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs ) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 50
Non-repetitive peak on-state current, 50 Hz, 2.5 s(see Notes 1 and 2) I
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
Junction temperature T
Operating free - air temperature range 0 to 70 °C
Storage temperature range T
Lead temperature 1.5 mm from case for 10 s T
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics for the A and B terminals, TJ = 25°C
I
TSP
TSM
/dt 250 A/µs
T
J
stg
lead
10 A rms
150 °C
-40 to +150 °C
260 °C
A
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reference zener
V
Z
voltage
Off-state leakage
I
D
current
Off-state capacitance VD = 0 f = 1 kHz (see Note 4) 1 5 pF
C
off
= ± 1mA ± 58 V
I
Z
= ± 50 V ± 10 µA
V
D
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
electrical characteristics for the A and C or the B and C terminals, TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reference zener
V
Z
voltage
Temperature coefficient
∝
V
Z
of reference voltage
Breakover voltage (see Notes 5 and 6) - 82 V
V
(BO)
Breakover current (see Note 5) - 0.15 - 0.6 A
I
(BO)
Forward voltage IF = 5 A (see Notes 5 and 6) 3 V
V
F
Peak on-state voltage IT = - 5 A (see Notes 5 and 6) - 2.2 - 3 V
V
TM
Holding current (see Note 5) - 150 mA
I
H
Critical rate of rise of
dv/dt
off-state voltage
Off-state leakage
I
D
current
Off-state capacitance VD = 0 f = 1 kHz (see Note 4) 300 500 pF
C
off
NOTES: 5. These parameters must be measured using pulse techniques, t
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
= - 1mA - 58 V
I
Z
0.1 %/
(see Note 7) - 5 kV/
= - 50 V - 10 µA
V
D
= 100 µs, duty cycle ≤ 2%.
w
(minimum)..
Z
o
C
µs
PRODUCT INFORMATION
2
TISP1082
PARAMETER MEASUREMENT INFORMATIO
N
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS A AND B
Figure 2. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS A AND C OR B AND C†
†Polarity is determined at terminal A or B with respect to C
PRODUCT INFORMATION
3
TISP1082
I
, I
- On-State Current, Forward Current - A
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
thermal characteristics
PARAMETER MIN TYP MAX UNIT
Junction to free air thermal resistance 62.5 °C/W
R
θJA
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
ON-STATE AND FORWARD CURRENTS
vs
ON-STA TE A ND FORWARD VOLTAGES
1000
I
F
100
10
I
F
I
T
F
T
1
1 10 100
VT , VF - On-State Voltage, Forward Voltage - V
Figure 3. Figure 4.
TCR1LAA
I
T
ZENER AND BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
85
80
75
V
Z
70
V
V
(BO)
65
- Zener Voltage, Breakover Voltage - V
, V
V
V
(BO)
Z
Z
60
55
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
(BO)
TCR1LAB
PRODUCT INFORMATION
4
Loading...