Power Innovations TIPP32B, TIPP32C, TIPP32A, TIPP32 Datasheet
● 20 W Pulsed Power Dissipation
● 100 V Capability
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
LP PACKAGE
(TOP VIEW)
● 2 A Continuous Collector Current
● 4 A Peak Collector Current
E
C
B
● Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIPP32
Collector-base voltage (I
Collector-emitter voltage (I
E
= 0)
= 0)
B
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Pulsed power dissipation (see Note 3) P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 6.4 mW/°C.
= 20 V, IC = 1 A, tp = 10 ms, duty cycle ≤ 2%.
3. V
CE
TIPP32A
TIPP32B
TIPP32C
TIPP32
TIPP32A
TIPP32B
TIPP32C
V
V
CBO
CEO
EBO
C
CM
B
tot
T
j
stg
L
1
2
3
MDTRAB
-40
-60
-80
-100
-40
-60
-80
-100
-5 V
-2 A
-4 A
-1 A
0.8 W
20 W
-55 to +150 °C
-55 to +150 °C
260 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIPP32
V
(BR)CEO
I
CES
I
CEO
I
EBO
h
V
CE(sat)
V
h
|hfe|
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Small signal forward
fe
current transfer ratio
Small signal forward
current transfer ratio
= -5 mA
I
C
IB = 0
(see Note 4)
V
= -40 V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
V
CE
VCE= -30 V
= -60 V
V
CE
= -5 V IC= 0 -1 mA
V
EB
VCE = -4 V
= -4 V
V
CE
= -375 mA IC= -2 A (see Notes 4 and 5) -1 V
I
B
= -4 V IC= -2 A (see Notes 4 and 5) -1.5 V
V
CE
= -10 V IC= -0.5 A f = 1 kHz 20
V
CE
= -10 V IC= -0.5 A f = 1 MHz 3
V
CE
V
BE
V
BE
V
BE
V
BE
I
= 0
B
= 0
I
B
I
= -1 A
C
= -2 A
I
C
= 0
= 0
= 0
= 0
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
TIPP32A
TIPP32B
TIPP32C
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32/32A
TIPP32B/32C
(see Notes 4 and 5)
-40
-60
-80
-100
20
10
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
V
mA
mA
PRODUCT INFORMATION
2
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