Power Innovations TIPP112, TIPP111, TIPP110 Datasheet
● 20 W Pulsed Power Dissipation
● 100 V Capability
TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
LP PACKAGE
(TOP VIEW)
● 2 A Continuous Collector Current
● 4 A Peak Collector Current
E
C
B
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIPP110
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Pulsed power dissipation (see Note 3) P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
= 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%.
3. V
CE
E
= 0)
= 0)
B
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
V
V
CBO
CEO
EBO
C
CM
B
tot
T
j
stg
L
1
2
3
MDTRAB
60
80
100
60
80
100
5 V
2 A
4 A
50 mA
0.8 W
20 W
-55 to +150 °C
-55 to +150 °C
260 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
(see Notes 4 and 5)
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector-base
cut-off current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Parallel diode
EC
forward voltage
= 10 mA
I
C
IB = 0
(see Note 4)
V
= 30 V
CE
= 40 V
V
CE
= 50 V
V
CE
V
= 60 V
CE
= 80 V
V
CE
= 100 V
V
CE
= 5 V IC= 0 2 mA
V
EB
VCE = 4 V
= 4 V
V
CE
= 8 mA IC= 2 A (see Notes 4 and 5) 2.5 V
I
B
= 4 V IC= 2 A (see Notes 4 and 5) 2.8 V
V
CE
= 4 A IB= 0 (see Notes 4 and 5) 3.5 V
I
E
V
V
V
I
I
I
I
I
BE
BE
BE
B
B
B
C
C
= 0
= 0
= 0
= 0
= 0
= 0
= 1 A
= 2 A
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts and located
within 3.2 mm from device body.
60
80
100
1000
500
V
2
2
mA
2
1
1
mA
1
PRODUCT INFORMATION
2
Loading...