Power Innovations TIPL790A, TIPL790 Datasheet

● Rugged Epitaxial Planar Construction

● 10 A Continuous Collector Current

● Operating Characteristics Fully Guaranteed

at 100°C

● t

typically 320 ns, IC = 10 A

xo

TIPL790, TIPL790A

NPN SILICON POWER DARLINGTONS

TO-220 PACKAGE

(TOP VIEW)

B C E

1 2 3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

Collector-emitter voltage (V

Collector-emitter voltage (I Emitter-base voltage V

Continuous collector current I Peak collector current (see Note 1) I Continuous device dissipation at (or below) 25°C case temperature P Operating junction temperature range T Storage temperature range T

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

E

= 0)

BE

= 0)

B

= 0)

TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A

V

CBO

CES

CEO

EBO

C

CM

tot

j

stg

MDTRACA

150 200 150 200 120 150

8 V 10 A 15 A 70 W

-65 to +150 °C

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

V

CBO

I

CES

I

CEV

I

CEO

I

EBO

h

V

CE(sat)

V

BE(sat)

V

C

Collector-emitter sustaining voltage Collector-base breakdown voltage

Collector-emitter cut-off current

Collector cut-off current Collector cut-off current Emitter cut-off current Forward current

FE

transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Parallel diode

EC

forward voltage Current gain

f

t

bandwidth product Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 90 pF

ob

= 100 mA L = 25 mH (see Note 2)

I

C

= 1 mA (see Note 3)

I

C

V

= 150 V

CE

= 200 V

V

CE

= 150 V

V

CE

= 200 V

V

CE

VCE= 150 V

= 200 V

V

CE

VCE= 120 V

= 150 V

V

CE

= 5 V IC= 0 4 mA

V

EB

= 5 V IC= 0.5 A (see Notes 3 and 4) 60 500

V

CE

I

= 20 mA

B

= 30 mA

I

B

= 50 mA

I

B

= 50 mA

I

B

I

= 20 mA

B

= 30 mA

I

B

= 50 mA

I

B

= 50 mA

I

B

= 10 A IB = 0 3 V

I

E

= 10 V IC= 0.5 A f = 1 MHz (see Note 5) 10 MHz

V

CE

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

5. To obtain f

the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.

t

V

= 0

BE

= 0

V

BE

= 0

V

BE

= 0

V

BE

1.5 < V I

= 0

B

= 0

I

B

I

= 4 A

C

= 7 A

I

C

= 10 A

I

C

= 10 A

I

C

I

= 4 A

C

= 7 A

I

C

= 10 A

I

C

= 10 A

I

C

EB

T

C

T

C

<8 V

(see Notes 3 and 4)

TC = 100°C

(see Notes 3 and 4)

TC = 100°C

= 100°C = 100°C

= 300 µs, duty cycle ≤ 2%.

p

TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A

120 150 150 200

0.05

0.05 1 1

50 50 50 50

1.2

1.5

2.0

1.8

1.9

2.2

2.1

V

mA

µA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 1.79 °C/W

θJC

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Current storage time

t

si

t

Voltage rise time 160 750 ns

rv

Current fall time 250 400 ns

t

fi

Current tail time 280 450 ns

t

ti

Cross over time 320 500 ns

t

xo

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

= 10 A

I

C

I

B(off)

= -2.5 A

I

B(on)

V

BE(off)

= 50 mA

= -5 V

†

(see Figures 1 and 2)

MIN TYP MAX UNIT

450 700 ns

PRODUCT INFORMATION

2

NPN SILICON POWER DARLINGTONS

100

B. Resistors must be noninductive types.

AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33

ΩΩ

BY205-400

+5V

D45H11

TIPL790, TIPL790A

A - B = t B - C = t D - E = t E - F = t B - E = t

V Gen

68

ΩΩ

270

ΩΩ

Adjust pw to obtain I

For IC < 6 A VCC = 50 V

≥ 6 A VCC = 100 V

For I

C

sv rv fi ti xo

1 pF

1 k

µµ

F

0.02

BY205-400

C

ΩΩ

+5V

33

1 k

ΩΩ

BY205-400

2N2222

2N2904

47

ΩΩ

5X BY205-400

ΩΩ

RB

(on)

TUT

D44H11

V

BE(off)

Figure 1. Inductive-Load Switching Test Circuit

I

B(on)

I

B

A (90%)

C

90%

180

BY205-400

Base Current

H

µµ

V

clamp

v

cc

= 400 V

B

V

CE

I

C(on)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

10%

D (90%)

Collector Voltage

E (10%)

Collector Current

F (2%)

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

3