Power Innovations TIPL770 Datasheet

● Rugged Triple-Diffused Planar Construction

● 2.5 A Continuous Collector Current

● Operating Characteristics Fully Guaranteed

at 100°C

● 850 Volt Blocking Capability

● 50 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTOR

TO-220 PACKAGE

(TOP VIEW)

B C E

1 2 3

TIPL770

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I Collector-emitter voltage (V Collector-emitter voltage (I Emitter-base voltage V Continuous collector current I Peak collector current (see Note 1) I Continuous device dissipation at (or below) 25°C case temperature P Operating junction temperature range T Storage temperature range T

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

= 0) V

E

= 0) V

BE

= 0) V

B

CBO CES CEO EBO

C

CM

tot

j

stg

MDTRACA

850 V 850 V 400 V

10 V

2.5 A 8 A

50 W

-65 to +150 °C

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

TIPL770 NPN SILICON POWER TRANSISTOR

MARCH 1984 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

BE(sat)

C

Collector-emitter sustaining voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current

FE

transfer ratio Collector-emitter

saturation voltage

Base-emitter saturation voltage

Current gain

f

t

bandwidth product Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 55 pF

ob

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

= 100 mA L = 25 mH (see Note 2) 400 V

I

C

VCE= 850 V

= 850 V

V

CE

= 400 V IB= 0 5 µA

V

CE

= 10 V IC= 0 1 mA

V

EB

= 5 V IC= 0.5 A (see Notes 3 and 4) 20 60

V

CE

I

= 0.2 A

B

= 0.5 A

I

B

= 0.5 A

I

B

I

= 0.2 A

B

= 0.5 A

I

B

= 0.5 A

I

B

= 10 V IC= 0.5 A f = 1 MHz 12 MHz

V

CE

V

= 0

BE

= 0 TC = 100°C

V

BE

I

= 1 A

C

= 2.5 A

I

C

= 2.5 A

I

C

I

= 1 A

C

= 2.5 A

I

C

= 2.5 A

I

C

(see Notes 3 and 4)

TC = 100°C (see Notes 3 and 4)

TC = 100°C

= 300 µs, duty cycle ≤ 2%.

p

5

200

1.0

2.5

5.0

1.0

1.2

1.3

µA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 2.5 °C/W

θJC

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Voltage storage time

t

sv

t

Voltage rise time 200 ns

rv

Current fall time 200 ns

t

fi

Current tail time 50 ns

t

ti

Cross over time 300 ns

t

xo

Voltage storage time

t

sv

t

Voltage rise time 400 ns

rv

Current fall time 250 ns

t

fi

Current tail time 50 ns

t

ti

Cross over time 500 ns

t

xo

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

= 2.5 A

I

C

V

BE(off)

= 2.5 A

I

C

V

BE(off)

= -5 V

I

= 0.5 A (see Figures 1 and 2)

B(on)

I

= 0.5 A

B(on)

= 100°C

T

C

†

(see Figures 1 and 2)

MIN TYP MAX UNIT

2 µs

2.5 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTOR

100

B. Resistors must be noninductive types.

MARCH 1984 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33

ΩΩ

BY205-400

+5V

D45H11

TIPL770

A - B = t B - C = t D - E = t E - F = t B - E = t

V Gen

68

ΩΩ

270

ΩΩ

Adjust pw to obtain I

For IC < 6 A VCC = 50 V

≥ 6 A VCC = 100 V

For I

C

sv rv fi ti xo

1 pF

1 k

µµ

F

0.02

BY205-400

C

ΩΩ

+5V

33

1 k

ΩΩ

BY205-400

2N2222

2N2904

47

ΩΩ

5X BY205-400

ΩΩ

RB

(on)

TUT

D44H11

V

BE(off)

Figure 1. Inductive-Load Switching Test Circuit

I

B(on)

I

B

A (90%)

C

90%

180

BY205-400

Base Current

H

µµ

V

clamp

v

cc

= 400 V

B

V

CE

I

C(on)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

10%

D (90%)

Collector Voltage

E (10%)

Collector Current

F (2%)

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

3