Power Innovations TIPL765A, TIPL765 Datasheet

TIPL765, TIPL765A

NPN SILICON POWER TRANSISTORS

● Rugged Triple-Diffused Planar Construction

SOT-93 PACKAGE

● 10 A Continuous Collector Current

● Operating Characteristics Fully Guaranteed

B

(TOP VIEW)

1

at 100°C

● 1000 Volt Blocking Capability

● 125 W at 25°C Case Temperature

C

E

Pin 2 is in electrical contact with the mounting base.

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

Collector-emitter voltage (V

Collector-emitter voltage (I Emitter-base voltage V

Continuous collector current I Peak collector current (see Note 1) I Continuous device dissipation at (or below) 25°C case temperature P Operating junction temperature range T Storage temperature range T

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

E

= 0)

BE

= 0)

B

= 0)

TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A

V

CBO

CES

CEO

EBO

C

CM

tot

j

stg

MDTRAA

850

1000

850

1000

400 450

10 V 10 A 15 A

125 W

-65 to +150 °C

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

BE(sat)

C

Collector-emitter sustaining voltage

Collector-emitter cut-off current

Collector cut-off current Emitter cut-off current Forward current

FE

transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Current gain

f

t

bandwidth product Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 150 pF

ob

= 100 mA L = 25 mH (see Note 2)

I

C

V

= 850 V

CE

= 1000 V

V

CE

= 850 V

V

CE

= 1000 V

V

CE

VCE= 400 V

= 450 V

V

CE

= 10 V IC= 0 1 mA

V

EB

= 5 V IC= 0.5 A (see Notes 3 and 4) 15 60

V

CE

I

= 0.4 A

B

= 1 A

I

B

= 2 A

I

B

= 2 A

I

B

I

= 0.4 A

B

= 1 A

I

B

= 2 A

I

B

= 2 A

I

B

= 10 V IC= 0.5 A f = 1 MHz 8 MHz

V

CE

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

V

BE

V

BE

V

BE

V

BE

I

= 0

B

= 0

I

B

I

= 2 A

C

= 5 A

I

C

= 10 A

I

C

= 10 A

I

C

I

= 2 A

C

= 5 A

I

C

= 10 A

I

C

= 10 A

I

C

= 0 = 0 = 0 = 0

T

= 100°C

C

= 100°C

T

C

(see Notes 3 and 4)

TC = 100°C

(see Notes 3 and 4)

TC = 100°C

= 300 µs, duty cycle ≤ 2%.

p

TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A

400 450

50

50 200 200

50

0.5

1.0

2.5

5.0

1.1

1.3

1.7

1.6

V

µA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 1 °C/W

θJC

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Voltage storage time

t

sv

t

Voltage rise time 300 ns

rv

Current fall time 200 ns

t

fi

Current tail time 50 ns

t

ti

Cross over time 400 ns

t

xo

Voltage storage time

t

sv

t

Voltage rise time 400 ns

rv

Current fall time 300 ns

t

fi

Current tail time 80 ns

t

ti

Cross over time 500 ns

t

xo

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

= 10 A

I

C

V

BE(off)

= 10 A

I

C

V

BE(off)

= -5 V

I

= 2 A (see Figures 1 and 2)

B(on)

I

= 2 A

B(on)

= 100°C

T

C

†

(see Figures 1 and 2)

MIN TYP MAX UNIT

2 µs

3.5 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

100

B. Resistors must be noninductive types.

AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33

ΩΩ

BY205-400

+5V

D45H11

TIPL765, TIPL765A

A - B = t B - C = t D - E = t E - F = t B - E = t

V Gen

68

ΩΩ

270

ΩΩ

Adjust pw to obtain I

For IC < 6 A VCC = 50 V

≥ 6 A VCC = 100 V

For I

C

sv rv fi ti xo

1 pF

1 k

µµ

F

0.02

BY205-400

C

ΩΩ

+5V

33

1 k

ΩΩ

BY205-400

2N2222

2N2904

47

ΩΩ

5X BY205-400

ΩΩ

RB

(on)

TUT

D44H11

V

BE(off)

Figure 1. Inductive-Load Switching Test Circuit

I

B(on)

I

B

A (90%)

C

90%

180

BY205-400

Base Current

H

µµ

V

clamp

v

cc

= 400 V

B

V

CE

I

C(on)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

10%

D (90%)

Collector Voltage

E (10%)

Collector Current

F (2%)

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

3