Power Innovations TIPL761C, TIPL761B Datasheet

TIPL761B, TIPL761C

NPN SILICON POWER TRANSISTORS

● Rugged Triple-Diffused Planar Construction

SOT-93 PACKAGE

● 4 A Continuous Collector Current

● Operating Characteristics Fully Guaranteed

B

(TOP VIEW)

1

at 100°C

● 1200 Volt Blocking Capability

● 100 W at 25°C Case Temperature

C

E

Pin 2 is in electrical contact with the mounting base.

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

Collector-emitter voltage (V

Collector-emitter voltage (I Emitter-base voltage V

Continuous collector current I Peak collector current (see Note 1) I Continuous device dissipation at (or below) 25°C case temperature P Operating junction temperature range T Storage temperature range T

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

E

= 0)

BE

= 0)

B

= 0)

TIPL761B TIPL761C TIPL761B TIPL761C TIPL761B TIPL761C

V

CBO

CES

CEO

EBO

C

CM

tot

j

stg

MDTRAA

1100 1200 1100 1200

500 550

10 V

4 A 8 A

100 W

-65 to +150 °C

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

TIPL761B, TIPL761C NPN SILICON POWER TRANSISTORS

MAY 1989 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

BE(sat)

C

Collector-emitter sustaining voltage

Collector-emitter cut-off current

Collector cut-off current Emitter cut-off current Forward current

FE

transfer ratio Collector-emitter

saturation voltage

Base-emitter saturation voltage

Current gain

f

t

bandwidth product Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 110 pF

ob

= 10 mA L = 25 mH (see Note 2)

I

C

V

= 1100 V

CE

= 1200 V

V

CE

= 1100 V

V

CE

= 1200 V

V

CE

VCE= 500 V

= 550 V

V

CE

= 10 V IC= 0 1 mA

V

EB

= 5 V IC= 0.5 A (see Notes 3 and 4) 20 60

V

CE

I

= 0.4 A

B

= 0.6 A

I

B

= 0.6 A

I

B

I

= 0.4 A

B

= 0.6 A

I

B

= 0.6 A

I

B

= 10 V IC= 0.5 A f = 1 MHz 12 MHz

V

CE

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

V

BE

V

BE

V

BE

V

BE

I

= 0

B

= 0

I

B

I

= 2 A

C

= 3 A

I

C

= 3 A

I

C

I

= 2 A

C

= 3 A

I

C

= 3 A

I

C

= 0 = 0 = 0 = 0

T

= 100°C

C

= 100°C

T

C

(see Notes 3 and 4) TC = 100°C

= 300 µs, duty cycle ≤ 2%.

p

TIPL761B TIPL761C TIPL761B TIPL761C TIPL761B TIPL761C TIPL761B TIPL761C

500 550

50

50 200 200

50

1.0

2.5

5.0

1.2

1.4

1.3

V

µA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 1.25 °C/W

θJC

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Voltage storage time

t

sv

t

Voltage rise time 300 ns

rv

Current fall time 250 ns

t

fi

Current tail time 150 ns

t

ti

Cross over time 400 ns

t

xo

Voltage storage time

t

sv

t

Voltage rise time 500 ns

rv

Current fall time 250 ns

t

fi

Current tail time 150 ns

t

ti

Cross over time 750 ns

t

xo

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

IC = 3 A V

BE(off)

= 3 A

I

C

V

BE(off)

= -5 V

I

= 0.6 A (see Figures 1 and 2)

B(on)

I

= 0.6 A

B(on)

= 100°C

T

C

†

(see Figures 1 and 2)

MIN TYP MAX UNIT

2.5 µs

3 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

100

B. Resistors must be noninductive types.

PARAMETER MEASUREMENT INFORMATION

33

ΩΩ

BY205-400

+5V

D45H11

TIPL761B, TIPL761C

MAY 1989 - REVISED MARCH 1997

A - B = t B - C = t D - E = t E - F = t B - E = t

V Gen

68

ΩΩ

270

ΩΩ

Adjust pw to obtain I

For IC < 6 A VCC = 50 V

≥ 6 A VCC = 100 V

For I

C

sv rv fi ti xo

1 pF

1 k

µµ

F

0.02

BY205-400

C

ΩΩ

+5V

33

1 k

ΩΩ

BY205-400

2N2222

2N2904

47

ΩΩ

5X BY205-400

ΩΩ

RB

(on)

TUT

D44H11

V

BE(off)

Figure 1. Inductive-Load Switching Test Circuit

I

B(on)

I

B

A (90%)

C

90%

180

BY205-400

Base Current

H

µµ

V

clamp

v

cc

= 400 V

B

V

CE

I

C(on)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

10%

D (90%)

Collector Voltage

E (10%)

Collector Current

F (2%)

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

3