Power Innovations TIPL760C, TIPL760B Datasheet

TIPL760B, TIPL760C

NPN SILICON POWER TRANSISTORS

PRODUCT INFORMATION

1

MAY 1989 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

● Rugged Triple-Diffused Planar Construction

● 4 A Continuous Collector Current

● Operating Characteristics Fully Guaranteed

at 100°C

● 1200 Volt Blocking Capability

● 75 W at 25°C Case Temperature

B
C
E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1
2
3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

E

= 0)

TIPL760B
TIPL760C

V

CBO

1100
1200

V

Collector-emitter voltage (V

BE

= 0)

TIPL760B
TIPL760C

V

CES

1100
1200

V

Collector-emitter voltage (I

B

= 0)

TIPL760B
TIPL760C

V

CEO

500
550

V

Emitter-base voltage V

EBO

10 V

Continuous collector current I

C

4 A

Peak collector current (see Note 1) I

CM

8 A

Continuous device dissipation at (or below) 25°C case temperature P

tot

75 W

Operating junction temperature range T

j

-65 to +150 °C

Storage temperature range T

stg

-65 to +150 °C

TIPL760B, TIPL760C
NPN SILICON POWER TRANSISTORS

2

MAY 1989 - REVISED MARCH 1997

PRODUCT INFORMATION

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

Collector-emitter
sustaining voltage

I

C

= 10 mA L = 25 mH (see Note 2)

TIPL760B
TIPL760C

500
550

V

I

CES

Collector-emitter
cut-off current

V

CE

= 1100 V

V

CE

= 1200 V

V

CE

= 1100 V

V

CE

= 1200 V

V

BE

= 0

V

BE

= 0

V

BE

= 0

V

BE

= 0

T

C

= 100°C

T

C

= 100°C

TIPL760B
TIPL760C
TIPL760B
TIPL760C

50

50
200
200

µA

I

CEO

Collector cut-off
current

VCE= 500 V
V

CE

= 550 V

I

B

= 0

I

B

= 0

TIPL760B
TIPL760C

50

50

µA

I

EBO

Emitter cut-off
current

V

EB

= 10 V IC= 0 1 mA

h

FE

Forward current
transfer ratio

V

CE

= 5 V IC= 0.5 A (see Notes 3 and 4) 20 60

V

CE(sat)

Collector-emitter
saturation voltage

I

B

= 0.4 A

I

B

= 0.6 A

I

B

= 0.6 A

I

C

= 2 A

I

C

= 3 A

I

C

= 3 A

(see Notes 3 and 4)
TC = 100°C

1.0

2.5

5.0

V

V

BE(sat)

Base-emitter
saturation voltage

I

B

= 0.4 A

I

B

= 0.6 A

I

B

= 0.6 A

I

C

= 2 A

I

C

= 3 A

I

C

= 3 A

(see Notes 3 and 4)
TC = 100°C

1.2

1.4

1.3

V

f

t

Current gain
bandwidth product

V

CE

= 10 V IC= 0.5 A f = 1 MHz 12 MHz

C

ob

Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 110 pF

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 1.56 °C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

sv

Voltage storage time

I

C

= 3 A

V

BE(off)

= -5 V

I

B(on)

= 0.6 A (see Figures 1 and 2)

2.5 µs

t

rv

Voltage rise time 300 ns

t

fi

Current fall time 250 ns

t

ti

Current tail time 150 ns

t

xo

Cross over time 400 ns

t

sv

Voltage storage time

I

C

= 3 A

V

BE(off)

= -5 V

I

B(on)

= 0.6 A

T

C

= 100°C

(see Figures 1 and 2)

3 µs

t

rv

Voltage rise time 500 ns

t

fi

Current fall time 250 ns

t

ti

Current tail time 150 ns

t

xo

Cross over time 750 ns

3

MAY 1989 - REVISED MARCH 1997

TIPL760B, TIPL760C

NPN SILICON POWER TRANSISTORS

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATION

Figure 1. Inductive-Load Switching Test Circuit

Figure 2. Inductive-Load Switching Waveforms

RB

(on)

V

BE(off)

V

clamp

= 400 V

v

cc

µµ

H

180

33

ΩΩ

+5V

D45H11

BY205-400

BY205-400

2N2222

BY205-400

5X BY205-400

BY205-400

1 k

ΩΩ

68

ΩΩ

1 k

ΩΩ

47

ΩΩ

2N2904

D44H11

100

ΩΩ

270

ΩΩ

V Gen

+5V

1 k

ΩΩ

0.02

µµ

F

TUT

1 pF

33

ΩΩ

Adjust pw to obtain I

C

For IC < 6 A VCC = 50 V
For I

C

≥ 6 A VCC = 100 V

Base Current

A (90%)

I

B(on)

I

B

Collector Voltage

Collector Current

D (90%)

E (10%)

F (2%)

C

B

90%

10%

V

CE

I

C(on)

A - B = t

sv

B - C = t

rv

D - E = t

fi

E - F = t

ti

B - E = t

xo

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

B. Resistors must be noninductive types.