Power Innovations TIP49, TIP50, TIP48, TIP47 Datasheet

● 40 W at 25°C Case Temperature

● 1 A Continuous Collector Current

● 2 A Peak Collector Current

● 20 mJ Reverse-Energy Rating

TIP47, TIP48, TIP49, TIP50

NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

B
C
E

1
2
3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIP47

Collector-base voltage (I

Collector-emitter voltage (I

E

= 0)

= 0)

B

Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTE 1: This value applies for tp ≤ 1 ms, duty cycle ≤ 2%.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.

V

BE(off)

TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50

V

V

CBO

CEO

EBO

C

CM

B
tot
tot

stg

L

C

j

2

B(on)

MDTRACA

350
400
450
500
250
300
350
400

5 V
1 A
2 A

0.6 A
40 W

2 W

20 mJ

-65 to +150 °C

-65 to +150 °C
260 °C

= 0.4 A, RBE = 100 Ω,

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TIP47

V

(BR)CEO

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

h

|hfe|

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current

Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter
saturation voltage
Base-emitter

BE

voltage
Small signal forward

fe

current transfer ratio
Small signal forward
current transfer ratio

= 30 mA

I

C

IB = 0

(see Note 5)
V

= 350 V

CE

= 400 V

V

CE

= 450 V

V

CE

= 500 V

V

CE

V

= 150 V

CE

= 200 V

V

CE

= 250 V

V

CE

= 300 V

V

CE

= 5 V IC= 0 1 mA

V

EB

VCE = 10 V

= 10 V

V

CE

= 0.2 A IC= 1 A (see Notes 5 and 6) 1 V

I

B

= 10 V IC= 1 A (see Notes 5 and 6) 1.5 V

V

CE

= 10 V IC= 0.2 A f = 1 kHz 25

V

CE

= 10 V IC= 0.2 A f = 2 MHz 5

V

CE

V

BE

V

BE

V

BE

V

BE

I

B

I

B

I

B

I

B

I

C

I

C

= 0
= 0
= 0

= 0
= 0
= 0
= 0
= 0

= 0.3 A
= 1 A

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50
TIP47
TIP48
TIP49
TIP50

(see Notes 5 and 6)

250
300
350
400

30
10

1
1
1
1
1
1
1
1

150

V

mA

mA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn on time IC = 1 A

t

on

Turn off time 2 µs

t

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= -5 V

I

B(on)

= 200 Ω

R

L

= 0.1 A

†

I

= -0.1 A

B(off)

(see Figures 1 and 2)

MIN TYP MAX UNIT

0.2 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

= 15 V, Source Impedance = 50

DECEMBER 1971 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

+25 V

TIP47, TIP48, TIP49, TIP50

V

1

t

p

tp = 20 µs
Duty cycle = 1%
V

1

A - B = t

d

B - C = t

r

E - F = t

f

D - E = t

s

A - C = t

on

D - F = t

off

BD135

T

V

100

1

Ω

ΩΩ

BD136

47

15

120

ΩΩ

ΩΩ

82

ΩΩ

ΩΩ

µµ

680 F

680 F

µµ

100

ΩΩ

100

TUT

V

V

= 250 V

CC

F

µµ

cc

Figure 1. Resistive-Load Switching Test Circuit

90%

90%

C

I

C

10%

B

90%

I

B

A

10%

E

10%

F

D

I

B(on)

dI

dt

B

≥ 2 A/µs

0%

0%

Figure 2. Resistive-Load Switching Waveforms

PRODUCT INFORMATION

I

B(off)

3