Power Innovations TIP29A, TIP29B, TIP29, TIP29C Datasheet
● Designed for Complementary Use with the
TIP30 Series
● 30 W at 25°C Case Temperature
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 1 A Continuous Collector Current
● 3 A Peak Collector Current
● Customer-Specified Selections Available
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIP29
Collector-base voltage (I
Collector-emitter voltage (I
E
= 0)
= 0)
B
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.
V
BE(off)
TIP29A
TIP29B
TIP29C
TIP29
TIP29A
TIP29B
TIP29C
V
V
CBO
CEO
EBO
C
CM
B
tot
tot
stg
L
C
j
2
B(on)
MDTRACA
80
100
120
140
40
60
80
100
5 V
1 A
3 A
0.4 A
30 W
2 W
32 mJ
-65 to +150 °C
-65 to +150 °C
250 °C
= 0.4 A, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIP29
V
(BR)CEO
I
CES
I
CEO
I
EBO
h
V
CE(sat)
V
h
|hfe|
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Small signal forward
fe
current transfer ratio
Small signal forward
current transfer ratio
= 30 mA
I
C
IB = 0
(see Note 5)
V
= 80 V
CE
= 100 V
V
CE
= 120 V
V
CE
= 140 V
V
CE
VCE= 30 V
= 60 V
V
CE
= 5 V IC= 0 1 mA
V
EB
VCE = 4 V
= 4 V
V
CE
= 125 mA IC= 1 A (see Notes 5 and 6) 0.7 V
I
B
= 4 V IC= 1 A (see Notes 5 and 6) 1.3 V
V
CE
= 10 V IC= 0.2 A f = 1 kHz 20
V
CE
= 10 V IC= 0.2 A f = 1 MHz 3
V
CE
V
BE
V
BE
V
BE
V
BE
I
B
I
B
I
C
I
C
= 0
= 0
= 0
= 0
= 0
= 0
= 0.2 A
= 1 A
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
TIP29A
TIP29B
TIP29C
TIP29
TIP29A
TIP29B
TIP29C
TIP29/29A
TIP29B/29C
(see Notes 5 and 6)
40
60
80
100
40
15 75
0.2
0.2
0.2
0.2
0.3
0.3
V
mA
mA
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 4.17 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = 1 A
t
on
t
Turn-off time 2 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= -4.3 V
I
B(on)
= 30 Ω
R
L
= 0.1 A
†
I
= -0.1 A
B(off)
= 20 µs, dc ≤ 2%
t
p
MIN TYP MAX UNIT
0.5 µs
PRODUCT INFORMATION
2
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