Power Innovations TIP2955 Datasheet
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
● Designed for Complementary Use with the
TIP3055 Series
SOT-93 PACKAGE
(TOP VIEW)
● 90 W at 25°C Case Temperature
B
1
● 15 A Continuous Collector Current
● Customer-Specified Selections Available
C
E
Pin 2 is in electrical contact with the mounting base.
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies when the base-emitter resistance RBE = 100 Ω.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0) V
E
= 0) (see Note 1) V
B
= 0, RS = 0.1 Ω, VCC = -10 V.
CBO
CER
EBO
C
B
tot
tot
stg
L
C
j
2
B(on)
MDTRAA
-100 V
-70 V
-7 V
-15 A
-7 A
90 W
3.5 W
62.5 mJ
-65 to +150 °C
-65 to +150 °C
260 °C
= -0.4 A, RBE = 100 Ω,
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
I
I
I
V
CE(sat)
V
Collector-emitter
breakdown voltage
Collector cut-off
CEO
current
Voltage between
CEV
base and emitter
Emitter cut-off
EBO
current
Forward current
h
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Small signal forward
h
fe
current transfer ratio
Small signal forward
|hfe|
current transfer ratio
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
= -30 mA IB = 0 (see Note 5) -60 V
I
C
= -30 V IB= 0 -0.7 mA
V
CE
= -100 V VBE = 1.5 V -5 mA
V
CE
= -7 V IC= 0 -5 mA
V
EB
VCE = -4 V
= -4 V
V
CE
IB = -0.4 A
= -3.3 A
I
B
= -4 V IC= -4 A (see Notes 5 and 6) -1.8 V
V
CE
= -10 V IC= -0.5 A f = 1 kHz 20
V
CE
= -10 V IC= -0.5 A f = 1 MHz 3
V
CE
I
= -4 A
C
= -10 A
I
C
I
= -4 A
C
= -10 A
I
C
(see Notes 5 and 6)
(see Notes 5 and 6)
20
70
5
-1.1
-3
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 1.39 °C/W
θJC
Junction to free air thermal resistance 35.7 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = -6 A
t
on
t
Turn-off time 0.7 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= 4 V
I
B(on)
R
= 5 Ω
L
= -0.6 A
†
I
= 0.6 A
B(off)
= 20 µs, dc ≤ 2%
t
p
MIN TYP MAX UNIT
0.4 µs
PRODUCT INFORMATION
2
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