Power Innovations TIP160, TIP162, TIP161 Datasheet
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
● 50 W at 25°C Case Temperature
SOT-93 PACKAGE
● 10 A Continuous Collector Current
● 15 A Peak Collector Current
● Maximum V
● I
CEX(sus)
7 A at rated V
of 2.8 V at IC = 6.5 A
CE(sat)
(BR)CEO
B
C
E
Pin 2 is in electrical contact with the mounting base.
(TOP VIEW)
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIP160
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Peak commutating anti-parallel diode current (I
Continuous base current I
Continuous device dissipation at (or below) 100°C case temperature (see Note 3) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 4) P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 10 ms, duty cycle ≤ 10%.
2. This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitter.
3. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
4. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
E
= 0)
= 0)
B
TIP161
TIP162
TIP160
TIP161
TIP162
= 0) (see Note 2) I
B
V
V
CBO
CEO
EBO
C
CM
EM
B
tot
tot
j
stg
L
MDTRAA
320
350
380
320
350
380
5 V
10 A
15 A
10 A
1 A
50 W
3 W
-65 to +150 °C
-65 to +150 °C
260 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
B
I
B
I
B
I
C
I
C
= 0
= 0
= 0
= 6.5 A
= 10 A
I
CEO
I
CEX(sus)
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
EC
Collector-emitter
cut-off current
Collector-emitter
sustaining current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
V
= 320 V
CE
= 350 V
V
CE
= 380 V
V
CE
= V
V
CLAMP
V
EB
V
CE
(BR)CEO
= 5 V IC= 0 100 mA
= 2.2 V IC= 4 A (see Notes 5 and 6) 200
IB = 0.1A
= 1 A
I
B
= 0.1A IC= 6.5 A (see Notes 5 and 6) 2.2 V
I
B
= 10 A IB= 0 (see Notes 5 and 6) 3.5 V
I
E
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
TIP160
TIP161
TIP162
(see Notes 5 and 6)
1 mA
7 A
2.8
2.9
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
C
Junction to case thermal resistance 1 °C/W
θJC
Junction to free air thermal resistance 41.7 °C/W
θJA
Thermal capacitance of case 1.4 J/°C
θC
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Delay time
t
d
t
Rise time 1.5 µs
r
Storage time 2.2 µs
t
s
Fall time 2.6 µs
t
f
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
= 6.5 A
I
C
V
BE(off)
= -5 V
I
B(on)
R
= 5 Ω
L
= 100 mA
†
I
B(off)
= -100 mA
MIN TYP MAX UNIT
40 ns
PRODUCT INFORMATION
2
NPN SILICON POWER DARLINGTONS
PARAMETER MEASUREMENT INFORMATION
24 V
L = 7 mH
V
z
TIP160, TIP161, TIP162
JUNE 1973 - REVISED MARCH 1997
Driver and
Current
Limiting
Circuit
100
TUT
ΩΩ
0.2
Figure 1. Functional Test Circuit
16.6 ms
11.6 ms
Input
Signal
Base
Current
Collector
Current
Collector
Emitter
Voltage
0
0
0
0
24 V
µµ
F
0.22
ΩΩ
I
B
I
C
V
clamp
Figure 2. Functional Test Waveforms
= 10 VV
in
Figure 3. Switching Test Circuit
PRODUCT INFORMATION
40 V
0.056
IRF140
1 k
Adjust for
I
B
12 V
ΩΩ
7 mH
BY205-600
ΩΩ
TUT
V
clamp
47
ΩΩ
3
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