Power Innovations TIP151, TIP150 Datasheet

● 80 W at 25°C Case Temperature

● 7 A Continuous Collector Current

● 10 A Peak Collector Current

● Maximum V

● I

CEX(sus)

7 A at rated V

of 2 V at IC = 5 A

CE(sat)

(BR)CEO

TIP150, TIP151, TIP152

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

B
C
E

1
2
3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIP150

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. This value applies for tp ≤ 5 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

E

= 0)

= 0)

B

TIP151
TIP152
TIP150
TIP151
TIP152

V

V

CBO

CEO

EBO

C

CM

B
tot
tot

j

stg

L

MDTRACA

300
350
400
300
350
400

8 V
7 A

10 A

1.5 A
80 W

2 W

-65 to +150 °C

-65 to +150 °C
260 °C

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TIP150
TIP151
TIP152
TIP150
TIP151
TIP152
TIP150
TIP151
TIP152

(see Notes 4 and 5)

(see Notes 4 and 5)

(see Notes 4 and 5)

V

(BR)CBO

V

(BR)CEO

I

CEO

I

CEX(sus)

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

EC

h

fe

|hfe|

C

ob

Collector-base
breakdown voltage

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector-emitter
sustaining current
Emitter cut-off
current

Forward current
transfer ratio

Collector-emitter
saturation voltage

Base-emitter
saturation voltage
Parallel diode
forward voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
Output capacitance VCB = 10 V IE= 0 f = 1 MHz 100 pF

= 1 mA IE = 0

I

C

= 10 mA

I

C

IB = 0
(see Note 4)
V

= 300 V

CE

= 350 V

V

CE

= 400 V

V

CE

= V

V

CLAMP

V

EB

V

CE

V

CE

V

CE

I

= 10 mA

B

= 100 mA

I

B

= 250 mA

I

B

(BR)CEO

= 8 V IC= 0 15 mA
= 5 V

= 5 V
= 5 V

IB = 100 mA

= 250 mA

I

B

= 7 A IB= 0 (see Notes 4 and 5) 3.5 V

I

E

= 5 V IC= 0.5 A f = 1 kHz 200

V

CE

= 5 V IC= 0.5 A f = 1 MHz 10

V

CE

I

B

I

B

I

B

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

= 0
= 0
= 0

= 2.5 A
= 5 A
= 7 A
= 1 A
= 2 A
= 5 A
= 2 A
= 5 A

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

300
350
400
300
350
400

250
250
250

7 A

150

50
15

1.5

1.5
2

2.2

2.3

V

V

µA

V

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

C

Junction to case thermal resistance 1.56 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

Thermal capacitance of case 0.9 J/°C

θC

inductive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Voltage storage time

t

sv

Current storage time 4.7 µs

t

si

Voltage transition time 1.2 µs

t

rv

Current transition time 1.2 µs

t

ti

Cross-over time 2.0 µs

t

xo

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

= 5 A

I

C

V

(clamp)

= V

(BR)CEO

I

= 250 mA RBE = 47 Ω

B(on)

†

PRODUCT INFORMATION

MIN TYP MAX UNIT

3.9 µs

2

NPN SILICON POWER DARLINGTONS

PARAMETER MEASUREMENT INFORMATION

24 V

L = 7 mH

V

z

TIP150, TIP151, TIP152

JUNE 1973 - REVISED MARCH 1997

Driver and
Current
Limiting
Circuit

100

TUT

ΩΩ

0.2

Figure 1. Functional Test Circuit

16.6 ms

11.6 ms

Input
Signal

Base
Current

Collector
Current

Collector
Emitter
Voltage

0

0

0

0

24 V

µµ

F

0.22

ΩΩ

I

B

I

C

V

clamp

Figure 2. Functional Test Waveforms

= 10 VV

in

Figure 3. Switching Test Circuit

PRODUCT INFORMATION

40 V

0.056

IRF140

1 k

Adjust for

I

B

12 V

ΩΩ

7 mH

BY205-600

ΩΩ

TUT

V

clamp

47

ΩΩ

3