Power Innovations TIP116, TIP115 Datasheet
● Designed for Complementary Use with
TIP110, TIP111 and TIP112
● 50 W at 25°C Case Temperature
TIP115, TIP116, TIP117
PNP SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 4 A Continuous Collector Current
● Minimum h
of 500 at 4 V, 2 A
FE
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIP115
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0)
E
= 0)
B
= 0, RS = 0.1 Ω, VCC = -20 V.
TIP116
TIP117
TIP115
TIP116
TIP117
V
V
CBO
CEO
EBO
C
CM
B
tot
tot
stg
L
C
j
2
B(on)
MDTRACA
-60
-80
-100
-60
-80
-100
-5 V
-4 A
-6 A
-50 mA
50 W
2 W
25 mJ
-65 to +150 °C
-65 to +150 °C
260 °C
= -5 mA, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP115, TIP116, TIP117
PNP SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIP115
TIP116
TIP117
TIP115
TIP116
TIP117
TIP115
TIP116
TIP117
(see Notes 5 and 6)
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Parallel diode
EC
forward voltage
= -30 mA
I
C
IB = 0
(see Note 5)
V
= -30 V
CE
= -40 V
V
CE
= -50 V
V
CE
V
= -60 V
CB
= -80 V
V
CB
= -100 V
V
CB
= -5 V IC= 0 -2 mA
V
EB
VCE = -4 V
= -4 V
V
CE
= -8 mA IC= -2 A (see Notes 5 and 6) -2.5 V
I
B
= -4 V IC= -2 A (see Notes 5 and 6) -2.8 V
V
CE
= -5 A IB= 0 (see Notes 5 and 6) -3.5 V
I
E
I
B
I
B
I
B
I
E
I
E
I
E
I
C
I
C
= 0
= 0
= 0
= 0
= 0
= 0
= -1 A
= -2 A
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
-60
-80
-100
1000
500
V
-2
-2
mA
-2
-1
-1
mA
-1
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = -2 A
t
on
t
Turn-off time 4.5 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= 5 V
I
B(on)
= 15 Ω
R
L
= -8 mA
†
I
= 8 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
MIN TYP MAX UNIT
2.6 µs
PRODUCT INFORMATION
2
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