Power Innovations TIP100, TIP102 Datasheet
● Designed for Complementary Use with
TIP105, TIP106 and TIP107
● 80 W at 25°C Case Temperature
TIP100, TIP101, TIP102
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 8 A Continuous Collector Current
● Maximum V
of 2.5 V at IC = 8 A
CE(sat)
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIP100
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0)
E
= 0)
B
= 0, RS = 0.1 Ω, VCC = 20 V.
TIP101
TIP102
TIP100
TIP101
TIP102
V
V
CBO
CEO
EBO
C
CM
B
tot
tot
stg
L
C
j
2
B(on)
MDTRACA
60
80
100
60
80
100
5 V
8 A
15 A
1 A
80 W
2 W
10 mJ
-65 to +150 °C
-65 to +150 °C
260 °C
= 5 mA, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP100, TIP101, TIP102
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
(see Notes 5 and 6)
(see Notes 5 and 6)
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Parallel diode
EC
forward voltage
= 30 mA
I
C
IB = 0
(see Note 5)
V
= 30 V
CE
= 40 V
V
CE
= 50 V
V
CE
V
= 60 V
CB
= 80 V
V
CB
= 100 V
V
CB
= 5 V IC= 0 8 mA
V
EB
VCE = 4 V
= 4 V
V
CE
IB = 6 mA
= 80 mA
I
B
= 4 V IC= 8 A (see Notes 5 and 6) 2.8 V
V
CE
= 8 A IB= 0 (see Notes 5 and 6) 3.5 V
I
E
I
I
I
I
I
I
I
I
I
I
B
B
B
E
E
E
C
C
C
C
= 0
= 0
= 0
= 0
= 0
= 0
= 3 A
= 8 A
= 3 A
= 8 A
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
60
80
100
1000
200
50
50
50
50
50
50
20000
2
2.5
V
µA
µA
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
C
Junction to case thermal resistance 1.56 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
Thermal capacitance of case 0.9 J/°C
θC
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Delay time
t
d
t
Rise time 350 ns
r
Storage time 1.8 µs
t
s
Fall time 2.45 µs
t
f
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
I
C
V
BE(off)
= 8 A
= -5 V
I
B(on)
R
L
= 80 mA
= 5 Ω
†
I
= -80 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
MIN TYP MAX UNIT
35 ns
PRODUCT INFORMATION
2
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