Power Innovations TICP206M, TICP206D Datasheet

TICP206 SERIES

SILICON TRIACS

Copyright © 1997, Power Innovations Limited, UK

● 1.5 A RMS

MARCH 1988 - REVISED MARCH 1997

LP PACKAGE

(TOP VIEW)

● Glass Passivated Wafer

● 400 V to 600 V Off-State Voltage

● Max I

of 10 mA

GT

G
MT2
MT1

1
2
3

● Package Options

PACKAGE PACKING PART # SUFFIX

LP Bulk (None)

LP with fomed leads Tape and Reel R

G

MT2

LP PACKAGE

WITH FORMED LEADS

(TOP VIEW)

1
2

3

MT1

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) I

Peak on-state surge current full-sine-wave (see Note 3) I
Peak on-state surge current half-sine-wave (see Note 4) I
Peak gate current I
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) P
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T

TICP206D
TICP206M

V

DRM

T(RMS)

TSM
TSM

GM

G(AV)

C

stg

L

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.

5. This value applies for a maximum averaging time of 20 ms.

400
600

1.5 A
10 A
12 A

±0.2 A

0.3 W

-40 to +110 °C

-40 to +125 °C
230 °C

MDC2AA

MDC2AB

V

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

I

DRM

I

GTM

V

GTM

Repetitive peak off­state current

Peak gate trigger
current

Peak gate trigger
voltage

= rated V

V

D

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

DRM

= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†

IG = 0 ±20 µA
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω

t
t
t
t
t
t
t
t

p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)

> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs

† All voltages are with respect to Main Terminal 1.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

MIN TYP MAX

8

-8

-8

10

2.5

-2.5

-2.5

2.5

UNIT

mA

V

1

TICP206 SERIES
SILICON TRIACS

MARCH 1988 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER TEST CONDITIONS

V

TM

I

H

I

L

Peak on-state
voltage

Holding current

Latching current

= ±1 A IG = 50 mA (see Note 6) ±2.2 V

I

TM

V
V
V
V

supply
supply
supply
supply

= +12 V†
= -12 V†
= +12 V†
= -12 V†

I

= 0

G

= 0

I

G

(see Note 7)

† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t

the current carrying contacts are located within 3.2 mm from the device body.

7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
= 100 Ω, t

R

G

= 20 µs, tr = ≤ 15 ns, f = 1 kHz.

p(g)

MIN TYP MAX

Init’ I

= 100 mA

TM

= -100 mA

Init’ I

TM

= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

p

30

-30
40

-40

UNIT

mA

mA

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT

vs

TEMPERATURE

1000

V

supply IGTM

+ +
+ -

100

- -

- +

10

- Gate Trigger Current - mA

GT

1

I

0·1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

Figure 1. Figure 2.

VAA = ± 12 V

RL = 10 ΩΩ
t

p(g)

TC05AA

= 20 µs

GATE TRIGGER VOLTAGE

vs

TEMPERATURE

10

V

supply IGTM

+ +

}

+ -

- ­}

- +

1

- Gate Trigger Voltage - V

GT

V

0·1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

VAA = ± 12 V
RL = 10 ΩΩ

t

= 20 µs

p(g)

TC05AB

PRODUCT INFORMATION

2

TYPICAL CHARACTERISTICS

TICP206 SERIES

SILICON TRIACS

MARCH 1988 - REVISED MARCH 1997

HOLDING CURRENT

vs

CASE TEMPERATURE

100

VAA = ± 12 V

IG = 0

Initiating ITM = 100 mA

10

V

1

- Holding Current - mA

H

I

0·1

supply

+

-

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

Figure 3. Figure 4.

TC05AD

GATE FORWARD VOLTAGE

vs

GATE FORWARD CURRENT

10

1

0·1

- Gate Forward Voltage - V

GF

V

QUADRANT 1

0·01

0·0001 0·001 0·01 0·1 1

IGF - Gate Forward Current - A

IA = 0

TC = 25 °C

TC05AC

LATCHING CURRENT

vs

CASE TEMPERATURE

100

V

supply IGTM

+ +

+ -

- -

- +

10

- Latching Current - mA

L

I

1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

VAA = ± 12 V

Figure 5.

TC05AE

PRODUCT INFORMATION

3