Power Innovations TICP107M, TICP107D Datasheet
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
JANUARY 1999 - REVISED JUNE 2000Copyright © 2000, Power Innovations Limited, UK
● 1 A Continuous On-State Current
● 15 A Surge-Current
● Glass Passivated Wafer
● 400 V to 600 V Off-State Voltage
● I
50 µA min, 200 µA max
GT
● di/dt 100A/µs
● Package Options
PACKAGE PACKING PART # SUFFIX
LP Bulk (None)
LP with fomed leads Tape and Reel R
G
A
K
G
A
LP PACKAGE
(TOP VIEW)
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
1
2
3
K
absolute maximum ratings over operating junction temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 25°C ambient temperature (see Note 2) I
Surge on-state current at (or below) 25°C ambient temperature (see Note 3) I
Critical rate of rise of on-state current at 110°C (see Note 4) di/dt 100 A/µs
Peak positive gate current (pulse width
Junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. These values apply when the gate-cathode resistance R
2. These values apply for continuous dc operation with resistive load.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. Rate of rise of on-state current after triggering with I
≤ 300 µs) I
= 1 kΩ .
GK
= 10mA, diG/dt = 1A/µs.
G
TICP107D
TICP107M
TICP107D
TICP107M
V
DRM
V
RRM
T(RMS)
TSM
GM
J
stg
L
400
600
400
600
1 A
15 A
0.2 A
-40 to +110 °C
-40 to +125 °C
230 °C
MDC1AA
MDC1AB
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
JANUARY 1999 - REVISED JUNE 2000
electrical characteristics at 25°C ambient temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
I
Repetitive peak
DRM
off-state current
Repetitive peak
RRM
reverse current
Gate trigger current VAA = 12 V R
I
GT
Gate trigger voltage VAA = 12 V R
V
GT
Holding current VAA = 12 V Initiating IT = 10 mA 2 mA
I
H
On-state voltage IT= 2 A (see Note 5) 1.4 V
V
T
NOTE 5: This parameter must be measured using pulse techniques, t
the current carrying contacts, are located within 3.2 mm from the device body.
= rated V
V
D
= rated V
V
R
DRM
RRM
R
= 1 kΩ 20 µA
GK
I
= 0 200 µA
G
= 100 Ω t
L
= 100 Ω t
L
= 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
p
≥ 20 µs 50 200 µA
p(g)
≥ 20 µs 0.4 1 V
p(g)
PRODUCT INFORMATION
2
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