Power Innovations TICP106M, TICP106D Datasheet
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
MARCH 1988 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
● 2 A Continuous On-State Current
● 15 A Surge-Current
● Glass Passivated Wafer
● 400 V to 600 V Off-State Voltage
● Max I
of 200 µA
GT
● Package Options
PACKAGE PACKING PART # SUFFIX
LP Bulk (None)
LP with fomed leads Tape and Reel R
G
A
K
G
A
LP PACKAGE
(TOP VIEW)
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
1
2
3
K
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 85°C case temperature (see Note 2) I
Surge on-state current (see Note 3) I
Peak positive gate current (pulse width
Average gate power dissipation (see Note 4) P
Operating case temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 85°C derate linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
≤ 300 µs) I
TICP106D
TICP106M
TICP106D
TICP106M
V
DRM
V
RRM
T(RMS)
TSM
GM
G(AV)
C
stg
L
400
600
400
600
15 A
0.2 A
0.3 W
-40 to +110 °C
-40 to +125 °C
230 °C
MDC1AA
MDC1AB
V
V
2 A
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
MARCH 1988 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
I
Repetitive peak
DRM
off-state current
Repetitive peak
RRM
reverse current
Gate trigger current VAA = 6 V RL= 100 Ω t
I
GT
Gate trigger voltage VAA = 6 V
V
GT
Holding current VAA = 6 V RGK= 1 kΩ Initiating IT = 10 mA 5 mA
I
H
Peak on-state
V
TM
voltage
NOTE 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
= rated V
V
D
= rated V
V
R
= 1 A (see Note 5) 1.5 V
I
TM
DRM
RRM
RGK = 1 kΩ 20 µA
IG = 0 200 µA
≥ 20 µs 60 200 µA
R
= 100 Ω
L
RGK= 1 kΩ
p(g)
t
≥ 20 µs 0.4 1 V
p(g)
PRODUCT INFORMATION
2
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