Power Innovations TIC266S, TIC266N, TIC266M Datasheet

TIC266 SERIES

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

● High Current Triacs

● 25 A RMS

● Glass Passivated Wafer

● 400 V to 800 V Off-State Voltage

MT1
MT2

● 175 A Peak Current

● Max I

of 50 mA (Quadrants 1 - 3)

GT

G

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIC266D

Repetitive peak off-state voltage (see Note 1)

Full-cycle RMS on-state current at (or below) 50°C case temperature (see Note 2) I
Peak on-state surge current full-sine-wave (see Note 3) I
Peak gate current I
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 50°C derate linearly to 110°C case temperature at
the rate of 625 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

TIC266M
TIC266S
TIC266N

TO-220 PACKAGE

(TOP VIEW)

1
2
3

V

DRM

T(RMS)

TSM

GM

C

stg

L

400
600
700
800

25 A

175 A

±1 A

-40 to +110 °C

-40 to +125 °C
230 °C

MDC2ACA

V

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

I

DRM

I

GTM

V

V
I

H

GTM

TM

Repetitive peak
off-state current

Peak gate trigger
current

Peak gate trigger
voltage

Peak on-state voltage ITM = ±35.2 A IG = 50 mA (see Note 4) ±1.5 ±1.7 V
Holding current

= Rated V

V

D

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

V

supply

DRM

= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†

= +12 V†
= -12 V†

IG = 0 TC = 110°C ±2 mA
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
R

= 10 Ω

L

RL = 10 Ω
RL = 10 Ω
RL = 10 Ω

I

= 0

G

= 0

I

G

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

t

p(g)

Init’ I
Init’ I

> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs

= 100 mA

TM

= -100 mA

TM

† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t

the current carrying contacts are located within 3.2 mm from the device body.

= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from

p

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

MIN TYP MAX

7

50

-15

-50

-16

-50

28

0.7

-0.7

-0.8

0.8

2

-2

-2
2

6

-1340-40

UNIT

mA

V

mA

1

TIC266 SERIES

I

- Gate Trigger Current - mA

V

- Gate Trigger Voltage - V

SILICON TRIACS

JULY 1991 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

MIN TYP MAX

20

-20

±1 V/µs

I

L

dv/dt

dv/dt

di/dt

PARAMETER TEST CONDITIONS

V

= +12 V†

Latching current
Critical rate of rise of

off-state voltage
Critical rise of

(c)

commutation voltage
Critical rate of rise of
on -state current

supply

= -12 V†

V

supply

= Rated V

V

D

VD = Rated V
di/dt = 0.5 I

= Rated V

V

D

D

D

T(RMS)

D

diG/dt = 50 mA/µs

(see Note 5)

IG = 0 TC = 110°C ±450 V/µs

/ms

I

= 50 mA TC = 110°C ±200 A/µs

GT

T

= 80°C

C

= 1.4 I

I

T

T(RMS)

† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:

= 100 Ω, t

R

G

= 20 µs, tr = ≤ 15 ns, f = 1 kHz.

p(g)

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 1.52 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

UNIT

mA

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT

vs

CASE TEMPERATURE

1000

100

10

GT

V

1

supply IGTM

+ +
+ -

- -

- +

VAA = ± 12 V

RL = 10 ΩΩ

t

= 20 µs

p(g)

0·1

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

Figure 1. Figure 2.

TC10AA

GATE TRIGGER VOLTAGE

vs

CASE TEMPERATURE

0·1

ALL QUADRANTS

0·01

GT

0·001

-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C

VAA = ± 12 V

RL = 10 ΩΩ

t

= 20 µs

p(g)

TC10AB

PRODUCT INFORMATION

2