Power Innovations TIC253S, TIC253M, TIC253N, TIC253D Datasheet
TIC253 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
● High Current Triacs
SOT-93 PACKAGE
● 20 A RMS
● Glass Passivated Wafer
MT1
(TOP VIEW)
1
● 400 V to 800 V Off-State Voltage
● 150 A Peak Current
● Max I
of 50 mA (Quadrants 1 - 3)
GT
MT2
G
Pin 2 is in electrical contact with the mounting base.
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC253D
Repetitive peak off-state voltage (see Note 1)
TIC253M
TIC253S
V
DRM
TIC253N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) I
Peak on-state surge current full-sine-wave (see Note 3) I
Peak gate current I
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T
T(RMS)
TSM
GM
C
stg
L
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 500 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
400
600
700
800
20 A
150 A
±1 A
-40 to +110 °C
-40 to +125 °C
230 °C
MDC2AD
V
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS
I
DRM
I
GTM
V
V
I
H
GTM
TM
Repetitive peak
off-state current
Peak gate trigger
current
Peak gate trigger
voltage
Peak on-state voltage ITM = ±28.2 A IG = 50 mA (see Note 4) ±1.4 ±1.7 V
Holding current
= Rated V
V
D
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
DRM
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= -12 V†
IG = 0 TC = 110°C ±2 mA
R
= 10 Ω
L
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
R
= 10 Ω
L
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
I
= 0
G
= 0
I
G
t
p(g)
t
p(g)
t
p(g)
t
p(g)
t
p(g)
t
p(g)
t
p(g)
t
p(g)
Init’ I
Init’ I
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
= 100 mA
TM
= -100 mA
TM
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t
the current carrying contacts are located within 3.2 mm from the device body.
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
p
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
MIN TYP MAX
7
50
-15
-50
-16
-50
28
0.7
-0.7
-0.8
0.8
2
-2
-2
2
6
-1340-40
UNIT
mA
V
mA
1
TIC253 SERIES
I
- Gate Trigger Current - mA
V
- Gate Trigger Voltage - V
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
MIN TYP MAX
20
-20
±1 V/µs
I
L
dv/dt
dv/dt
di/dt
PARAMETER TEST CONDITIONS
V
= +12 V†
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
(c)
commutation voltage
Critical rate of rise of
on -state current
supply
= -12 V†
V
supply
= Rated V
V
D
VD = Rated V
di/dt = 0.5 I
= Rated V
V
D
D
D
T(RMS)
D
diG/dt = 50 mA/µs
(see Note 5)
IG = 0 TC = 110°C ±450 V/µs
/ms
I
= 50 mA TC = 110°C ±200 A/µs
GT
T
= 80°C
C
= 1.4 I
I
T
T(RMS)
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
= 100 Ω, t
R
G
= 20 µs, tr = ≤ 15 ns, f = 1 kHz.
p(g)
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 1.52 °C/W
θJC
Junction to free air thermal resistance 36 °C/W
θJA
UNIT
mA
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
100
10
GT
V
1
supply IGTM
+ +
+ -
- -
- +
VAA = ± 12 V
RL = 10 ΩΩ
t
= 20 µs
p(g)
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1. Figure 2.
TC10AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
0·1
ALL QUADRANTS
0·01
GT
0·001
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
VAA = ± 12 V
RL = 10 ΩΩ
t
= 20 µs
p(g)
TC10AB
PRODUCT INFORMATION
2
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