Power Innovations TIC246S, TIC246M, TIC246N, TIC246D Datasheet
TIC246 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000Copyright © 2000, Power Innovations Limited, UK
● High Current Triacs
● 16 A RMS
● Glass Passivated Wafer
● 400 V to 800 V Off-State Voltage
MT1
MT2
● 125 A Peak Current
● Max I
of 50 mA (Quadrants 1 - 3)
GT
G
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC246D
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) I
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) I
Peak gate current I
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
TIC246M
TIC246S
TIC246N
TO-220 PACKAGE
(TOP VIEW)
1
2
3
V
DRM
T(RMS)
TSM
GM
C
stg
L
400
600
700
800
16 A
125 A
±1 A
-40 to +110 °C
-40 to +125 °C
230 °C
MDC2ACA
V
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
DRM
I
GT
V
V
I
H
GT
T
Repetitive peak
off-state current
Gate trigger
current
Gate trigger
voltage
= rated V
V
D
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
DRM
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
IG = 0 TC = 110°C ±2 mA
R
L
R
L
R
L
R
L
R
L
R
L
R
L
R
L
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
t
t
t
t
t
t
t
t
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
On-state voltage ITM = ±22.5 A IG = 50mA (see Note 4) ±1.4 ±1.7 V
Holding current
V
V
supply
supply
= +12 V†
= -12 V†
I
= 0
G
= 0
I
G
Init’ I
Init’ I
= 100 mA
TM
= -100 mA
TM
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t
the current carrying contacts are located within 3.2 mm from the device body.
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
p
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
12
-19
-16
34
0.8
-0.8
-0.8
0.9
22
-1240-40
50
-50
-50
-2
-2
mA
2
V
2
mA
1
TIC246 SERIES
I
- Gate Trigger Current - mA
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
= +12 V†
I
L
dv/dt
dv/dt
di/dt
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
(c)
commutation voltage
Critical rate of rise of
on -state current
supply
= -12 V†
V
supply
= Rated V
V
D
VD = Rated V
di/dt = 0.5 I
V
D
di
G
T(RMS)
= Rated V
/dt = 50 mA/µs
(see Note 5)
D
D
D
IG = 0 TC = 110°C ±400 V/µs
T
= 80°C
/ms
C
= 1.4 I
I
T
T(RMS)
I
= 50 mA TC = 110°C ±100 A/µs
GT
±1.2 ±9 V/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
= 100 Ω, t
R
G
= 20 µs, tr = ≤ 15 ns, f = 1 kHz.
p(g)
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 1.9 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
80
-80
mA
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
100
10
GT
V
1
supply IGTM
+ +
+ -
- -
- +
VAA = ± 12 V
R
= 10 ΩΩ
L
t
= 20 µs
p(g)
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1. Figure 2.
TC08AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
10
1
- Gate Trigger Voltage - V
V
V
GT
supply IGTM
+ +
+ -
- -
- +
VAA = ± 12 V
}
R
= 10 ΩΩ
L
t
p(g)
= 20 µs
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
TC08AB
PRODUCT INFORMATION
2
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