Power Innovations TIC116N, TIC116M, TIC116D, TIC116S Datasheet
● 8 A Continuous On-State Current
● 80 A Surge-Current
● Glass Passivated Wafer
● 400 V to 800 V Off-State Voltage
● Max I
of 20 mA
GT
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000Copyright © 2000, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
K
A
G
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC116D
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Continuous on-state current at (or below) 70°C case temperature (see Note 1) I
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3) I
Peak positive gate current (pulse width
Peak gate power dissipation (pulse width
Average gate power dissipation (see Note 4) P
Operating case temperature range T
Storage temperature range T
Lead temperature 1.6 mm from case for 10 seconds T
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
≤ 300 µs) I
≤ 300 µs) P
TIC116M
TIC116S
TIC116N
TIC116D
TIC116M
TIC116S
TIC116N
V
DRM
V
RRM
T(RMS)
I
T(AV)
TM
GM
GM
G(AV)
C
stg
L
400
600
700
800
400
600
700
800
80 A
-40 to +110 °C
-40 to +125 °C
230 °C
MDC1ACA
V
V
8 A
5 A
3 A
5 W
1 W
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
I
dv/dt
Repetitive peak
DRM
off-state current
Repetitive peak
RRM
reverse current
Gate trigger current VAA = 12 V R
I
GT
Gate trigger voltage
V
GT
Holding current
I
H
On-state
V
T
voltage
Critical rate of rise of
off-state voltage
NOTE 5: This parameter must be measured using pulse techniques, t
the current carrying contacts, are located within 3.2 mm from the device body.
= rated V
V
D
= rated V
V
R
V
= 12 V
AA
≥ 20 µs
t
p(g)
= 12 V
V
AA
≥ 20 µs
t
p(g)
= 12 V
V
AA
≥ 20 µs
t
p(g)
V
= 12 V
AA
Initiating I
= 12 V
V
AA
Initiating I
= 8 A (see Note 5) 1.7 V
I
T
= rated V
V
D
DRM
RRM
= 100 mA
T
= 100 mA
T
D
IG = 0 TC = 110°C 2 mA
= 100 Ω t
L
R
= 100 Ω T
L
R
= 100 Ω
L
R
= 100 Ω T
L
IG = 0 TC = 110°C 400 V/µs
= 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
p
TC = 110°C 2 mA
≥ 20 µs 8 20 mA
p(g)
= - 40°C
C
= 110°C
C
T
= - 40°C
C
0.2
2.5
0.8 1.5
100
40
V
mA
thermal characteristics
R
R
Junction to case thermal resistance 3 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
PARAMETER MIN TYP MAX UNIT
PRODUCT INFORMATION
2
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