Power Innovations R3612 Datasheet

R3612

negative protection voltage is controlled by the voltage,

PROGRAMMABLE OVERVOLTAGE PROTECTOR

FOR ERICSSON COMPONENTS 3357/3 DCLIC

DECEMBER 1995 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK

OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS

● PBA 3357/3 DCLIC Overvoltage Protector

● Dual Voltage-Programmable Protector

- Wide 0 to -70 V Programming Range

- Low Voltage Overshoot Crowbar and Diode

- Low 5 mA max. Triggering Current

- Does not Charge Gate Supply

- Specified for 0°C to 70°C Operation

- Plastic Dual-in-line Package

● Rated for International Surge Wave Shapes

I

WAVE SHAPE STANDARD

2/10 µs TR-NWT-001089 80

0.5/700 µs RLM88 38
10/700 µs K17, K20, K21 38

10/1000 µs TR-NWT-001089 30

TSP

A

description

The R3612 is a dual forward-conducting buffered
p-gate over voltage protector in a plastic DIP
package. It is designed to protect the Ericsson
Components PBA 3357/3 DCLIC (Dual Channel
Complete Line Interface Circuit) against over
voltages on the telephone line caused by
lightning, a.c. power contact and induction. The
R3612 limits voltages that exceed the DCLIC
supply rail voltage.

The DCLIC line driver section is powered from
0 V (ground) and a negative voltage in the region
of -44 V to -56 V. The protector gate is connected
to this negative supply. This references the
protection (clipping) voltage to the negative
supply voltage. As the protection voltage will
track the negative supply voltage the over
voltage stress on the DCLIC is minimised.

Positive over voltages are clipped to ground by a
low voltage overshoot diode. Negative over
voltages are initially clipped close to the DCLIC
negative supply rail value. If sufficient current is
available from the over voltage, then the
protector will crowbar into a low voltage on-state
condition. As the over voltage subsides the high
holding current of the crowbar prevents d.c.
latchup.

P PACKAGE

(TOP VIEW)

1

K1

(Tip)

2

G

(Gate)

3

NC

4 5

K2

(Ring)

NC - No internal connection

Terminal typical application names shown in

parenthesis

8

K1

(Tip)

A
A

K2

(Ground)
(Ground)

(Ring)

MD6XAV

7
6

device symbol

K1 G K2

A

Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The

V

applied to the G terminal.

GG,

by power cross and induction. The gate
characteristic is designed to produce a net
current drain on the interface circuit voltage
supply during low level power cross or induction.
This removes the need for a separate clamping
diode across the voltage supply.

These monolithic protection devices are
fabricated in ion-implanted planar vertical power
structures for high reliability and in normal
system operation they are virtually transparent.

Characteristic values for the R3612 are
measured either at the extremes of the DCLIC
recommended operating voltage range (-44 V to

-56 V) or at the DCLIC maximum rated supply
voltage (-70 V).

SD6XAE

The buffered gate design reduces the loading on
the DCLIC supply during over voltages caused

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC

DECEMBER 1995 - REVISED SEPTEMBER 1997

absolute maximum ratings

RATING SYMBOL VALUE UNIT

Non-repetitive peak off-state voltage, I
Repetitive peak off-state voltage, I
Repetitive peak gate-cathode voltage, V
Non-repetitive peak on-state pulse current(see Notes 1 and 2)

10/1000 µs(Bellcore TR-NWT-001089, Section 4 and Appendix A) 30

0.2/310 µs(RLM88, open-circuit voltage wave shape 1.5 kV 0.5/700 µs)
5/310 µs(CCITT K17, K20 & K21, open-circuit voltage wave shape 1.5 kV 10/700 µs))
2/10 µs(Bellcore TR-NWT-001089, Section 4 and Appendix A) 80

Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)

200 ms 5.6
1 s
25 s

900 s
Non-repetitive peak gate current, 1/2 µs,(see Notes 1 and 2) I
Junction temperature T
Storage temperature range T

NOTES: 1. Initially the protector must be in thermal equilibrium with 0°C ≤ TJ≤ 70°C. The surge may be repeated after the device returns to its

initial conditions.

2. Above 70°C, derate linearly to zero at 150°C lead temperature.

= 0, 0°C ≤ TJ≤ 70°C V

G

= 0, 0°C ≤ TJ≤ 70°C V

G

= 0, 0°C ≤ TJ≤ 70°C V

KA

DSM
DRM

GKRM

I

TSP

I

TSM

GSM

J

stg

-90 V

-80 V

-80 V

38
38

3.5

0.7

0.42
25 A

-55 to +150 °C

-55 to +150 °C

A

A

recommended operating conditions

Gate decoupling capacitor 220 nF

C

G

electrical characteristics, T

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Off-state current VD= V

I

D

V

t

V

t

I

I

Breakover voltage

(BO)

Breakdown time

(BR)

Forward voltage IF= 5 A, tw= 500 µs 3 V

V

F

Peak forward recovery

FRM

voltage

Forward recovery time

FRM

Holding current IT= 1 A, di/dt = -1A/ms, VGG= -70 V, 0°C ≤ TJ≤ 70°C 105 mA

I

H

Gate reverse current VGG= -70 V, VAK= 0

GAS

Gate reverse current,

GAT

on state

= 25°C (unless otherwise noted)

amb

, VGK= 0

DRM

I

= 20 A, I3124 generator, open-circuit voltage wave shape 1 5 kV

T

0.5/700 µs, board resistance R
(See Note 3 and Figure 1.)
I

= 20 A, I3124 generator, open-circuit voltage

T

wave shape 1 5 kV 0.5/700 µs, board resist­ance R

= 35 Ω, CG= 220 nF, VGG= -56 V

S

(See Note 3 and Figure 1.)

I

= 20 A,I3124 generator, open-circuit voltage wave shape 1 5 kV

F

0.5/700 µs, board resistance R
(See Note 4 and Figure 1.)
I

= 20 A, I3124 generator, open-circuit voltage

T

wave shape 1 5 kV 0.5/700 µs, board resist­ance R

= 35 Ω, CG= 220 nF, VGG= -56 V

S

(See Note 4 and Figure 1.)

= 0.5 A, tw= 500 µs, VGG= -70 V -1 mA

I

T

T

= 0°C 5 µA

J

= 70°C 50 µA

T

J

= 35 Ω, CG= 220 nF, VGG= -56 V

S

V

< -70 V

(BR)

< -58.5 V

V

(BR)

= 35 Ω, CG= 220 nF, VGG= -56 V

S

V

> 10 V

F

> 5 V

V

F

> 1 V

V

F

T

= 0°C -5

J

= 70°C -50

T

J

MIN TYP MAX UNIT

-80 V

1

10000

µs

15 V

0.25
1

µs

10000

µA

PRODUCT INFORMATION

2

R3612

PROGRAMMABLE OVERVOLTAGE PROTECTOR

FOR ERICSSON COMPONENTS 3357/3 DCLIC

DECEMBER 1995 - REVISED SEPTEMBER 1997

electrical characteristics, T

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Gate reverse current,

I

forward conducting

GAF

state
Gate trigger current IT= 5 A, t

I

GT

Gate trigger voltage IT= 5 A, t

V

GT

Anode-cathode off-

C

AK

state capacitance

NOTES: 3.PBA 3357/3 maximum negative voltage pulse rating is -120 V for 0.25 µs, -90 V for 1 µs, -70 V for 10 ms and -70 V for d.c.

Compliance to these conditions is guaranteed by the maximum breakover voltage and the breakdown times of the R3612.

4.PBA 3357/3 maximum positive voltage pulse rating is 15 V for 0.25 µs, 10 V for 1 µs, 5 V for 10 ms and 1 V for d.c.. Compliance
to these conditions is guaranteed by the peak forward recovery voltage and the forward recovery times of the R3612

5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.

= 25°C (unless otherwise noted) (Continued)

amb

= 1 A, tw= 500 µs, VGG= -70 V -10 mA

I

F

≥ 20 µs, VGG= -44 V 5 mA

p(g)

≥ 20 µs, VGG= -44 V 2.5 V

p(g)

V

= -3 V 110

f = 1 MHz, V

= 1 V, IG= 0, (see Note 5)

d

D

= -56 V 60

V

D

pF

thermal characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

R

Junction to free air thermal resistance P

θJA

= 0.8 W,TA= 25°C, 5 cm2, FR4 PCB 100 °C/W

tot

PARAMETER MEASUREMENT INFORMATION

15
10

5
0

-70

VOLTAGE - V

-80

-90

-100

-110

-120

Figure 1. TRANSIENT LIMITS FOR R3612 LIMITING VOLTAGE

PBA 3357/3 DCLIC RING AND TIP VOLTAGE WITHSTAND

vs

TIME

0.25 µs
1 µs

10 ms

Time

1 µs

0.25 µs

PRODUCT INFORMATION

3

R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC

DECEMBER 1995 - REVISED SEPTEMBER 1997

PARAMETER MEASUREMENT INFORMATION

I

TSP

I

TSM

I

F

V

GK(BO)

+i

V

F

Quadrant I

Forward

Conduction

Characteristic

-v

I

(BO)

V

Quadrant III

Switching

Characteristic

(BO)

V

GG

I

S

V

S

V

D

I

D

I

H

V

T

I

T

I

TSM

I

TSP

-i

Figure 2. VOLTAGE-CURRENT CHARACTERISTIC

THERMAL INFORMATION

MAXIMUM NON-RECURRING 50 Hz CURRENT

vs

CURRENT DURATION

10

V

= 250 Vrms

GEN

R

= 10 to 150 Ω Ω

GEN

+v

PM6XAA

R3612

1

- Maximum Non-Recurrent 50 Hz Current - A

TSM

I

0.1
0·1 1 10 100 1000

t - Current Duration - s

PRODUCT INFORMATION

4

Figure 3.

PROGRAMMABLE OVERVOLTAGE PROTECTOR

FOR ERICSSON COMPONENTS 3357/3 DCLIC

DECEMBER 1995 - REVISED SEPTEMBER 1997

DEVICE PARAMETERS

general

Thyristor based over voltage protectors, for telecommunications equipment, became popular in the late
1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As
these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.
This resulted in the invention of new terms based on the application usage and device characteristic. Initially,
there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced
and stabilised. Information on fixed voltage over voltage protector terms, symbols and their definitions is given
in the publication SLPDE05, “Over-voltage Protection For Telecommunication Systems - Data Manual and
Application Information”, pp 1-4 to 1-6, Texas Instruments Limited, Bedford, 1994.

Programmable, (gated), over voltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. This section has a list of alternative terms and the
parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms
related to the device internal structure, rather than its application usage as a single device may have many
applications each using a different terminology for circuit connection.

terms, definitions and symbols

Thyristor over voltage protectors have substantially different characteristics and usage to the type of thyristor
covered by IEC 747-6. These differences necessitate the modification of some characteristic descriptions and
the introduction of new terms. Where possible terms are used from the following standards.

R3612

IEC 747-1:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 1: General
IEC 747-2:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier Diodes
IEC 747-6:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors

main terminal ratings

Repetitive Peak Off-State Voltage, V
Rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all d.c.
and repetitive voltage components.

Repetitive Peak On-State Current, I
Rated maximum (peak) value of a.c. power frequency on-state current of specified waveshape and frequency
which may be applied continuously.

Non-Repetitive Peak On-State Current, I
Rated maximum (peak) value of a.c. power frequency on-state surge current of specified waveshape and
frequency which may be applied for a specified time or number of a.c. cycles.

Non-Repetitive Peak Pulse Current, I
Rated maximum value of peak impulse pulse current of specified amplitude and waveshape that may be
applied.

Non-Repetitive Peak Forward Current, I
Rated maximum (peak) value of a.c. power frequency forward surge current of specified waveshape and
frequency which may be applied for a specified time or number of a.c. cycles.

DRM

TRM

TSP

TSM

FSM

PRODUCT INFORMATION

5