Power Innovations BUX85, BUX84 Datasheet

● 40 W at 25°C Case Temperature

● 2 A Continuous Collector Current

● 3 A Peak Collector Current

● Typical t

= 200 ns at 25°C

f

BUX84

NPN SILICON POWER TRANSISTOR

TO-220 PACKAGE

(TOP VIEW)

B C E

1 2 3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I Collector-emitter voltage (V Collector-emitter voltage (I Continuous collector current I Peak collector current (see Note 1) I Continuous device dissipation at (or below) 25°C case temperature P Operating junction temperature range T Storage temperature range T

NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

= 0) V

E

= 0) V

BE

= 0) V

B

CBO CES CEO

C

CM

tot

j

stg

MDTRACA

800 V 800 V 400 V

2 A 3 A

40 W

-65 to +150 °C

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

BUX84 NPN SILICON POWER TRANSISTOR

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

I

CES

I

EBO

h

V

CE(sat)

V

BE(sat)

C

Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current

FE

transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain

f

t

bandwidth product Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 60 pF

ob

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

5. To obtain f

the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.

t

= 0.1 A L = 25 mH (see Note 2) 400 V

I

C

VCE= 800 V

= 800 V

V

CE

= 5 V IC= 0 1 mA

V

EB

= 5 V IC= 0.1 A (see Notes 3 and 4) 35

V

CE

IB = 0.03 A

= 0.2 A

I

B

= 0.2 A IC= 1 A (see Notes 3 and 4) 1.1 V

I

B

= 10 V IC= 0.2 A 12 MHz

V

CE

V

= 0

BE

= 0 TC = 125°C

V

BE

I

= 0.3 A

C

I

C

= 1 A

(see Notes 3 and 4)

= 300 µs, duty cycle ≤ 2%.

p

0.2

0.8

mA

1

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 2.5 °C/W

θJC

resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Turn on time

t

on

Storage time 1.8 µs

t

s

Fall time 0.2 µs

t

f

Fall time

t

f

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

I

C

V

CC

I

C

V

CC

= 1 A

= 250 V

I

= 0.2 A

B(on)

(see Figures 1 and 2) I

= 0.2 A

B(on)

= 95°C

T

C

†

I

= -0.4 A

B(off)

I

= -0.4 A

B(off)

MIN TYP MAX UNIT

0.25 0.5 µs

0.4 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTOR

= 15 V, Source Impedance = 50

AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

+25 V

BUX84

V

1

t

p

tp = 20 µs Duty cycle = 1% V

1

A - B = t

d

B - C = t

r

E - F = t

f

D - E = t

s

A - C = t

on

D - F = t

off

BD135

T

V

100

1

Ω

ΩΩ

BD136

47

15

120

ΩΩ

82

ΩΩ

µµ

680 F

µµ

100

ΩΩ

100

TUT

V

= 250 V

F

µµ

cc

Figure 1. Resistive-Load Switching Test Circuit

90%

C

I

C

10%

B

90%

I

B

A

10%

E

10%

F

D

I

B(on)

dI

dt

B

≥ 2 A/µs

0%

Figure 2. Resistive-Load Switching Waveforms

PRODUCT INFORMATION

I

B(off)

3