Power Innovations BUPD1520 Datasheet

BUPD1520

E

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

MAY 1999 - REVISED SEPTEMBER 1999Copyright © 1999, Power Innovations Limited, UK

● Designed for Self Oscillating Inverter

Applications

TO-220 PACKAGE

(TOP VIEW)

● Rugged 1500 V Planar Construction

1

2

3

● Integral Free-Wheeling Anti-Parallel Diode

B

C

E

Pin 2 is in electrical contact with the mounting base.

device symbol

C

B

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

MDTRACA

RATING SYMBOL VALUE UNIT

Collector-emitter voltage (I

Collector-emitter voltage (V

Emitter-base voltage (I

= 0) V

B

= 0) V

BE

= 0) V

C

Continuous collector current I

Peak collector current (see Note 1) I

Continuous base current I

Peak base current (see Note 1) I

Continuous device dissipation at (or below) 25°C case temperature P

Operating junction temperature range T

Storage temperature range T

Lead temperature 3.2 mm from case for 10 seconds T

NOTE 1: This value applies for t

= 10 ms, duty cycle ≤ 2%.

p

CEO

CES

EBO

C

CM

B

BM

tot

j

stg

L

700 V

1500 V

11 V

2 A

2.5 A

2 A

2.5 A

50 W

-55 to +125 °C

-55 to +150 °C

300 °C

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

MAY 1999 - REVISED SEPTEMBER 1999

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

CEO

CBO

EBO

FE

Collector-emitter

voltage

Collector-base

voltage

Emitter-base

voltage

Collector cut-off

current

Collector-emitter

cut-off current

Emitter cut-off

current

Base-emitter

saturation voltage

Collector-emitter

saturation voltage

Forward current

transfer ratio

V

V

V

I

CEO

I

CES

I

EBO

V

BE(sat)

V

CE(sat)

h

NOTES: 2. These parameters must be measured using pulse techniques, t

3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.

= 1 mA 700 V

I

C

= 100 µA 1500 V

I

C

= 1 mA 11 V

I

EB

= 700 V IB= 0 100 µA

V

CE

= 1500 V VBE= 0 100 µA

V

CE

= 11 V IC= 0 1 mA

V

EB

I

= 100 mA

B

= 100 mA

I

B

= 400 mA

I

B

IB = 50 mA

= 100 mA

I

B

V

= 5 V

CE

= 5 V

V

CE

= 5 V

V

CE

= 5 V

V

CE

I

= 500 mA

C

= 1 A

I

C

= 2 A

I

C

I

= 250 mA

C

= 500 mA

I

C

I

= 10 mA

C

= 100 mA

I

C

= 250 mA

I

C

= 500 mA

I

C

= 300 µs, duty cycle ≤ 2%.

p

(see Notes 2 and 3)

(see Notes 2 and 3)

(see Notes 2 and 3)

10

10

10

1.0

1.1

V

1.2

0.3

0.7

1.2

3.0

V

21

25

25

7

18

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

R

Junction to free air thermal resistance 62.5 °C/W

θJA

Junction to case thermal resistance 2 °C/W

θJC

resistive switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Delay time

t

d

Rise time 0.6 µs

t

r

Storage time 1.0 µs

t

s

Fall time 0.2 µs

t

f

= 500 mA

I

C

= 125 V

V

CC

I

B(on)

I

B(off)

= 50 mA

= 250 mA

t

= 300 µs

p

Duty cycle = 2%

0.1 µs

PRODUCT INFORMATION

2