Power Innovations BULD85 Datasheet

BULD85KC

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

PRODUCT INFORMATION

1

MAY 1994 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

● Designed Specifically for High Frequency

Electronic Ballasts

● Integrated Fast t

rr

Anti-Parallel Diode,

Enhancing Reliability

● Diode t

rr

Typically 1 µs

● Tightly Controlled Transistor Storage Times

● Voltage Matched Integrated Transistor and

Diode

● Characteristics Optimised for Cool Running

● Diode-Transistor Charge Coupling

Minimised to Enhance Frequency Stability

description

The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast t

rr

anti­parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.

device symbol

B
C
E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1
2
3

B

C

E

NOTE 1: This value applies for tp = 10 ms, duty cycle ≤ 2%.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-emitter voltage (V

BE

= 0) V

CES

600 V

Collector-base voltage (I

E

= 0) V

CBO

600 V

Collector-emitter voltage (I

B

= 0) V

CEO

400 V

Emitter-base voltage V

EBO

9 V

Continuous collector current I

C

6 A

Peak collector current (see Note 1) I

CM

8 A

Continuous base current I

B

2 A

Peak base current (see Note 1) I

BM

4 A

Continuous device dissipation at (or below) 25°C case temperature P

tot

70 W

Maximum average continuous diode forward current at (or below) 25°C case temperature I

E(av)

0.5 A

Operating junction temperature range T

j

-65 to +150 °C

Storage temperature range T

stg

-65 to +150 °C

BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

2

MAY 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.

NOTE 4: Tested in a typical High Frequency Electronic Ballast.

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

Collector-emitter
sustaining voltage

I

C

= 0.1 A L = 25 mH 400 V

I

CES

Collector-emitter
cut-off current

V

CE

= 600 V VBE= 0 10 µA

I

EBO

Emitter cut-off
current

V

EB

= 9 V IC= 0 1 mA

V

BE(sat)

Base-emitter
saturation voltage

I

B

= 0.2 A IC= 1 A (see Notes 2 and 3) 0.85 1.1 V

V

CE(sat)

Collector-emitter
saturation voltage

IB = 0.2 A
I

B

= 0.4 A

I

C

= 1 A

I

C

= 2 A

(see Notes 2 and 3)

0.2

0.4

0.5
1

V

h

FE

Forward current
transfer ratio

V

CE

= 10 V

V

CE

= 1 V

V

CE

= 5 V

I

C

= 0.01 A

I

C

= 1 A

I

C

= 2 A

(see Notes 2 and 3)1010

10

17.5
15

15.52020

V

EC

Anti-parallel diode
forward voltage

I

E

= 1 A (see Notes 2 and 3) 1.2 1.5 V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJA

Junction to free air thermal resistance 62.5 °C/W

R

θJC

Junction to case thermal resistance 1.78 °C/W

switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

t

rr

Anti-parallel diode
reverse recovery time

Measured by holding transistor
in an off condition, V

EB

= -3 V.

(see Note 4) 1 µs

inductive-load switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

t

sv

Storage time

I

C

= 1 A

L = 1 mH

I

B(on)

= 0.2 A

I

B(off)

= 0.2 A

V

CC

= 40 V

V

CLAMP

= 300 V

4 5 µs

resistive-load switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

t

fi

Current fall time

I

C

= 1 A

V

CC

= 300 V

I

B(on)

= 0.2 A

I

B(off)

= 0.2 A

150 200 ns

3

MAY 1994 - REVISED SEPTEMBER 1997

BULD85KC

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

FORWARD CURRENT TRANSFER RATIO

vs

COLLECTOR CURRENT

IC - Collector Current - A

0·01 0·1 1·0 10

h

FE

- Forward Current Transfer Ratio

3·0

30

10

LDX85CHF

VCE = 1 V
VCE = 5 V
VCE = 10 V

TC = 25°C

ANTI-PARALLEL DIODE

INSTANTANEOUS FORWARD CURRENT

vs

INSTANTANEOUS FORWARD VOLTAGE

VEC - Instantaneous Forward Voltage - V

0 0·5 1·0 1·5 2·0 2·5

I

E

- Instantaneous Forward Current - A

0·01

0·1

1·0

10

LDX85CVF

TC = 25°C

BASE-EMITTER SATURATION VOLTAGE

vs

CASE TEMPERATURE

TC - Case Temperature - °C

-50 -25 0 25 50 75 100 125 150

V

BE(sat)

- Base-Emitter Saturation Voltage - V

0.6

0.7

0.8

0.9

1.0

LDX85CVB

IC = 1 A
IB = 0.2 A