Power Innovations BULD50 Datasheet
BULD50KC, BULD50SL
E
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
FEBRUARY 1994 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
● Designed Specifically for High Frequency
Electronic Ballasts
● Integrated Fast t
Enhancing Reliability
● Diode t
● New Low-Height SL Power Package,
Typically 1 µs
rr
Anti-Parallel Diode,
rr
B
C
E
TO220 Pin-Compatible
Pin 2 is in electrical contact with the mounting base.
● Tightly Controlled Transistor Storage Times
● Voltage Matched Integrated Transistor and
Diode
● Characteristics Optimised for Cool Running
● Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
device symbol
switching transistors has tightly controlled
storage times and an integrated fast t
anti-
rr
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
absolute maximum ratings at 25°C ✝ (unless otherwise noted)
TO-220 PACKAGE
B
C
E
B
(TOP VIEW)
1
2
3
MDTRACA
SL PACKAGE
(TOP VIEW)
1
2
3
C
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (V
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current
Peak collector current (see Note 2) I
Continuous base current
Peak base current (see Note 2) I
NOTES: 1. This value applies for tp = 1 s.
2. This value applies for t
≤ 25°C case temperature for BULD50KC, and ≤ 25°C ambient temperature for BULD50SL
✝
= 0) V
BE
= 0) V
E
= 0) V
B
BULD50KC
BULD50SL (see Note 1)
BULD50KC
BULD50SL (see Note 1)
= 10 ms, duty cycle ≤ 2%.
p
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
CES
CBO
CEO
EBO
I
C
CM
I
B
BM
600 V
600 V
400 V
9 V
3.5 A
6 A
1.5 A
2.5 A
1
BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
FEBRUARY 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C ✝ (unless otherwise noted) (continued)
RATING SYMBOL VALUE UNIT
Continuous device dissipation
Maximum average continuous diode forward current I
Operating junction temperature range T
Storage temperature range T
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
CEO(sus)
I
I
V
BE(sat)
V
CE(sat)
h
V
Collector-emitter
sustaining voltage
Collector-emitter
CES
cut-off current
Emitter cut-off
EBO
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
FE
transfer ratio
Anti-parallel diode
EC
forward voltage
Anti-parallel diode
t
rr
reverse recovery time
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
5. Tested in a typical High Frequency Electronic Ballast.
= 100 mA L = 25 mH 400 V
I
C
= 600 V VBE= 0 10 µA
V
CE
= 9 V IC= 0 1 mA
V
EB
= 150 mA IC= 750 mA (see Notes 3 and 4) 0.9 1.1 V
I
B
IB = 150 mA
= 300 mA
I
B
V
= 10 V
CE
= 1 V
V
CE
= 5 V
V
CE
= 1 A (see Notes 3 and 4) 1.25 1.5 V
I
E
I
= 750 mA
C
= 1.5 A
I
C
I
= 10 mA
C
= 750 mA
I
C
= 1.5 A
I
C
BULD50KC
BULD50SL
(see Notes 3 and 4)
(see Notes 3 and 4)1010
(see Note 5) 1 µs
P
tot
E(av)
stg
50
see Figure 11
W
0.5 A
j
-65 to +150 °C
-65 to +150 °C
0.2
0.4
0.5
1
V
17
10
15
15
20
20
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to free air thermal resistance
θJA
Junction to case thermal resistance BULD50KC 2.5 °C/W
θJC
BULD50KC
BULD50SL
inductive-load switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
sv
Storage time
I
= 750 mA
C
L = 1 mH
I
B(on)
I
B(off)
= 150 mA
= 150 mA
V
CC
V
CLAMP
= 40 V
= 300 V
resistive-load switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
fi
Current fall time
I
= 750 mA
C
= 300 V
V
CC
I
B(on)
I
B(off)
= 150 mA
= 150 mA
PRODUCT INFORMATION
62.5
115
°C/W
3.35 4.5 µs
150 250 ns
2
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
30
TC = 25°C
BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
FEBRUARY 1994 - REVISED SEPTEMBER 1997
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
LDX50SHF
INSTANTANEOUS FORWARD VOLTAGE
10
TC = 25°C
LDX50SVF
10
- Forward Current Transfer Ratio
FE
h
VCE = 1 V
VCE = 5 V
VCE = 10 V
1·0
0·01 0·1 1·0 10
IC - Collector Current - A
Figure 1. Figure 2.
BASE-EMITTER SATURATION VOLTAGE
1.0
IC = 750 mA
IB = 150 mA
1·0
0·1
- Instantaneous Forward Current - A
E
I
0·01
0 0·5 1·0 1·5 2·0 2·5 3·0
vs
CASE TEMPERATURE
VEC - Instantaneous Forward Voltage - V
LDX50SVB
0.9
0.8
0.7
- Base-Emitter Saturation Voltage - V
BE(sat)
V
0.6
0 25 50 75 100
TC - Case Temperature - °C
PRODUCT INFORMATION
Figure 3.
3
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