Power Innovations BUL770 Datasheet
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
● Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
● h
● Low Power Losses (On-state and Switching)
● Key Parameters Characterised at High
7 to 21 at VCE = 1 V, IC = 800 mA
FE
Temperature
● Tight and Reproducible Parametric
Distributions
B
C
E
Pin 2 is in electrical contact with the mounting base.
TO-220 PACKAGE
(TOP VIEW)
1
2
3
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (V
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Peak collector current (see Note 2) I
Continuous base current I
Peak base current (see Note 2) I
Continuous device dissipation at (or below) 25°C case temperature P
Operating junction temperature range T
Storage temperature range T
NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%.
2. This value applies for t
= 0) V
BE
= 0) V
E
= 0) V
B
= 300 µs, duty cycle ≤ 2%.
p
CES
CBO
CEO
EBO
C
CM
CM
B
BM
tot
j
stg
MDTRACA
700 V
700 V
400 V
9 V
2.5 A
6 A
8 A
1.5 A
2.5 A
50 W
-65 to +150 °C
-65 to +150 °C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
CEO(sus)
I
I
V
BE(sat)
V
CE(sat)
h
V
Collector-emitter
sustaining voltage
Collector-emitter
CES
cut-off current
Emitter cut-off
EBO
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
FE
transfer ratio
Collector-base forward
FCB
bias diode voltage
NOTES: 3. Inductive loop switching measurement.
4. These parameters must be measured using pulse techniques, t
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
= 100 mA L = 25 mH (see Note 3) 400 V
I
C
VCE= 700 V
= 700 V
V
CE
= 9 V IC= 0 1 mA
V
EB
IB = 160 mA
= 160 mA
I
B
IB = 160 mA
= 160 mA
I
B
V
= 1 V
CE
= 1 V
V
CE
= 5 V
V
CE
= 60 mA 870 mV
I
CB
V
= 0
BE
= 0 TC = 90°C
V
BE
I
= 800 mA
C
= 800 mA
I
C
I
= 800 mA
C
= 800 mA
I
C
I
= 10 mA
C
= 800 mA
I
C
= 3.2 A
I
C
= 300 µs, duty cycle ≤ 2%.
p
(see Notes 4 and 5)
TC = 90°C
(see Notes 4 and 5)
TC = 90°C
10
0.83
0.75
0.18
0.22
10
200
0.9
0.25
µA
V
V
18.5
7
14.5
2
7.5
21
14
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to free air thermal resistance 62.5 °C/W
θJA
Junction to case thermal resistance 2.5 °C/W
θJC
inductive-load switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Storage time
t
sv
t
Current fall time 150 190 ns
fi
Cross over time 300 400 ns
t
xo
Storage time IC= 800 mA
t
sv
t
Current fall time 140 200 ns
fi
= 800 mA
I
C
L = 1 mH
L = 1 mH
I
B(on)
I
B(off)
I
B(on)
I
B(off)
= 160 mA
= 320 mA
= 160 mA
= 100 mA
V
CC
V
CLAMP
V
CC
V
CLAMP
= 40 V
= 300 V
= 40 V
= 300 V
resistive-load switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Storage time IC= 800 mA
t
sv
t
Current fall time 150 250 ns
fi
V
CC
= 300 V
I
B(on)
I
B(off)
= 160 mA
= 160 mA
2.5 3 µs
4.3 5 µs
2.5 3.4 µs
PRODUCT INFORMATION
2
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
BUL770
JULY 1991 - REVISED SEPTEMBER 1997
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
30
TC = 25°C
10
- Forward Current Transfer Ratio
FE
h
VCE = 1 V
VCE = 5 V
1·0
0·01 0·1 1·0 10
IC - Collector Current - A
Figure 1. Figure 2.
L770CHF
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
IB = IC / 5
TC = 25°C
TC = 90°C
1·0
0·1
- Collector-Emitter Saturation Voltage - V
CE(sat)
V
0·01
0·1 1·0 10
IC - Collector Current - A
L770CVB
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
10
I
= IC / 5
B(on)
I
= IC / 2.5
B(off)
VCC = 40 V
V
= 300 V
CLAMP
L = 1 mH
1·0
TC = 25°C
0·1
Inductive Switching Time - µs
0·01
0·1 1·0 10
IC - Collector Current - A
Figure 3. Figure 4.
L770CI1
t
sv
t
xo
t
fi
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
10
Inductive Switching Time - µs
I
= 160 mA, VCC = 40 V, L = 1 mH
B(on)
I
= 320 mA, V
B(off)
1·0
t
sv
t
fi
0·1
0 20 40 60 80 100
TC - Case Temperature - °C
= 300 V, IC = 800 mA
CLAMP
L770CI3
PRODUCT INFORMATION
3
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