Power Innovations BU426, BU426A Datasheet

BU426, BU426A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

● Rugged Triple-Diffused Planar Construction

SOT-93 PACKAGE

● 900 Volt Blocking Capability

B

C

E

(TOP VIEW)

1

2

3

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

Collector-emitter voltage (V

Collector-emitter voltage (I

E

= 0)

BE

= 0)

B

= 0)

Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Peak base current (see Note 1) I
Continuous device dissipation at (or below) 50°C case temperature P
Operating junction temperature range T
Storage temperature range T

NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

BU426
BU426A
BU426
BU426A
BU426
BU426A

V

V

V

CBO

CES

CEO

C

CM

B

BM

tot

j

stg

MDTRAA

800
900
800
900
375
400

6 A

10 A

+2, -0.1 A

±3 A
70 W

-65 to +150 °C

-65 to +150 °C

V

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BU426, BU426A
NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

I

CES

I

EBO

h

V

CE(sat)

V

BE(sat)

Collector-emitter
sustaining voltage

Collector-emitter
cut-off current

Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage

= 100 mA L = 25 mH (see Note 2)

I

C

V

= 800 V

CE

= 900 V

V

CE

= 800 V

V

CE

= 900 V

V

CE

= 10 V IC= 0 10 mA

V

EB

= 5 V IC= 0.6 A (see Notes 3 and 4) 30 60

V

CE

IB = 0.5 A

= 1.25 A

I

B

IB = 0.5 A

= 1.25 A

I

B

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

V

BE

V

BE

V

BE

V

BE

I

= 2.5 A

C

= 4 A

I

C

I

= 2.5 A

C

= 4 A

I

C

= 0
= 0
= 0
= 0

T

= 125°C

C

= 125°C

T

C

(see Notes 3 and 4)

(see Notes 3 and 4)

= 300 µs, duty cycle ≤ 2%.

p

BU426
BU426A
BU426
BU426A
BU426
BU426A

375
400

1.5

1.4

1.6

V

1
1

mA

2
2

3

V

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 1.1 °C/W

θJC

resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Turn on time

t

on

Storage time 2 3.5 µs

t

s

Fall time 0.15 µs

t

f

Fall time

t

f

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

= 2.5 A

I

C

V

CC

I

= 2.5 A

C

V

CC

= 250 V

= 250 V

I

= 0.5 A

B(on)

(see Figures 1 and 2)
I

= 0.5 A

B(on)

= 95°C

T

C

†

I

= -1 A

B(off)

I

= -1 A

B(off)

MIN TYP MAX UNIT

0.3 0.6 µs

0.2 0.75 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

= 15 V, Source Impedance = 50

AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

+25 V

BU426, BU426A

V

1

t

p

tp = 20 µs
Duty cycle = 1%
V

1

A - B = t

d

B - C = t

r

E - F = t

f

D - E = t

s

A - C = t

on

D - F = t

off

BD135

T

V

100

1

Ω

ΩΩ

BD136

47

15

120

ΩΩ

ΩΩ

82

ΩΩ

ΩΩ

µµ

680 F

680 F

µµ

100

ΩΩ

100

TUT

V

= 250 V

F

µµ

cc

Figure 1. Resistive-Load Switching Test Circuit

90%

90%

C

I

C

10%

B

90%

I

B

A

10%

E

10%

F

D

I

B(on)

dI

dt

B

≥ 2 A/µs

0%

0%

Figure 2. Resistive-Load Switching Waveforms

PRODUCT INFORMATION

I

B(off)

3