Power Innovations BU406, BU407 Datasheet
● 7 A Continuous Collector Current
● 15 A Peak Collector Current
● 60 W at 25°C Case Temperature
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
Collector-emitter voltage (V
Collector-emitter voltage (I
E
= 0)
BE
= 0)
B
= -2 V)
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature P
Operating junction temperature range T
Storage temperature range T
NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
BU406
BU407
BU406
BU407
BU406
BU407
V
V
V
CBO
CEX
CEO
EB
C
CM
B
tot
j
stg
MDTRACA
400
330
400
330
200
150
6 V
7 A
15 A
4 A
60 W
-55 to +150 °C
-55 to +150 °C
V
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
I
CES
I
EBO
h
V
CE(sat)
V
BE(sat)
C
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
f
t
bandwidth product
Output capacitance VCB = 20 V IE= 0 f = 1 MHz 60 pF
ob
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain f
the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
t
= 30 mA IB= 0 140 V
I
C
V
= 400 V
CE
= 330 V
V
CE
= 250 V
V
CE
= 200 V
V
CE
= 250 V
V
CE
= 200 V
V
CE
= 6 V IC= 0 1 mA
V
EB
VCE = 10 V
= 10 V
V
CE
= 0.5 A IC= 5 A (see Notes 2 and 3) 1 V
I
B
= 0.5 A IC= 5 A (see Notes 2 and 3) 1.2 V
I
B
= 5 V IC= 0.5 A f = 1 MHz (see Note 4) 6 MHz
V
CE
V
BE
V
BE
V
BE
V
BE
V
BE
V
BE
I
= 4 A
C
= 0.5 A
I
C
= 0
= 0
= 0
= 0
= 0
= 0
T
= 150°C
C
= 150°C
T
C
(see Notes 2 and 3)
BU406
BU407
BU406
BU407
BU406
BU407
12
20
0.1
0.1
5
5
mA
1
1
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 2.08 °C/W
θJC
Junction to free air thermal resistance 70 °C/W
θJA
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS
Storage time
t
s
t
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
Turn off time 750 ns
(off)
= 5 A I
I
C
= 0.5A (see Figures 1 and 2)
B(end)
†
MIN TYP MAX UNIT
2.7 µs
PRODUCT INFORMATION
2
BU406, BU407
BB-
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
V
BB+
5.6
14.8
ΩΩ
TIP32
Current
Probes
µµ
H
TIP31
7.5
BY205
ΩΩ
TUT
47
ΩΩ
SET
I
+4V
INPUT
0
B
50
2N5337
100
ΩΩ
2N6191
ΩΩ
100
ΩΩ
TIP31
TIP32
1 k
ΩΩ
TIP31
22
ΩΩ
240
Vcc= 24V
µµ
H
5 pF
OUTPUT
BY205
22
ΩΩ
V
22
ΩΩ
Figure 1. Inductive-Load Switching Test Circuit
s
µµ
64
s
µµ
42
I
I
50%
B
0
I
C
0
V
fly
V
CE
0
B(end)
t
s
0.1 A
t
off
3 V
t
is the time for the collector
off
current I
after the collector to emitter
voltage V
its flyback excursion.
to decrease to 0.1 A
C
has risen 3 V into
CE
Figure 2. Inductive-Load Switching Waveforms
PRODUCT INFORMATION
3
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