Power Innovations BDX33, BDX33C, BDX33D, BDX33B, BDX33A Datasheet

● Designed for Complementary Use with

BDX34, BDX34A, BDX34B, BDX34C and
BDX34D

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

● 70 W at 25°C Case Temperature

1
2
3

● 10 A Continuous Collector Current

● Minimum h

of 750 at 3 V, 3 A

FE

B
C
E

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BDX33
BDX33A

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
Operating free air temperature range T
Storage temperature range T
Operating free-air temperature range T

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

E

= 0)

= 0)

B

BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D

V

V

CBO

CEO

EBO

C
B
tot
tot

J

stg

A

MDTRACA

45
60

80
100
120

45

60

80
100
120

5 V

10 A

0.3 A
70 W

2 W

-65 to +150 °C

-65 to +150 °C

-65 to +150 °C

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D

BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D

V

(BR)CEO

I

CEO

I

CBO

I

EBO

h

V

BE(on)

V

CE(sat)

V

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current

Emitter cut-off
current

Forward current

FE

transfer ratio

Base-emitter
voltage

Collector-emitter
saturation voltage

Parallel diode

EC

forward voltage

= 100 mA IB = 0 (see Note 3)

I

C

V

= 30 V

CE

= 30 V

V

CE

= 40 V

V

CE

= 50 V

V

CE

= 60 V

V

CE

= 30 V

V

CE

= 30 V

V

CE

= 40 V

V

CE

= 50 V

V

CE

= 60 V

V

CE

V

= 45 V

CB

= 60 V

V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

V

CB

= 45 V

V

CB

= 60 V

V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

V

CB

= 5 V IC= 0 10 mA

V

EB

V

= 3 V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

V

= 3 V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

= 3 V

V

CE

I

= 8 mA

B

= 8 mA

I

B

= 6 mA

I

B

= 6 mA

I

B

= 6 mA

I

B

= 8 A IB = 0 4 V

I

E

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

B

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

E

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0

= 4 A
= 4 A
= 3 A
= 3 A
= 3 A
= 4 A
= 4 A
= 3 A
= 3 A
= 3 A
= 4 A
= 4 A
= 3 A
= 3 A
= 3 A

T

= 100°C

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

T

= 100°C

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

= 100°C

T

C

(see Notes 3 and 4)

(see Notes 3 and 4)

(see Notes 3 and 4)

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

45
60

80
100
120

750
750
750
750
750

0.5

0.5

0.5

0.5

0.5
10
10
10
10
10

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

2.5

V

mA

1
1
1
1
1

mA

5
5
5
5
5

V

V

PRODUCT INFORMATION

2

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

resistive-load-switching characteristics at 25°C case temperature

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

Junction to case thermal resistance 1.78 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

PARAMETER TEST CONDITIONS

Turn-on time IC = 3 A

t

on

t

Turn-off time 5 µs

off

V

BE(off)

= -3.5 V

I

B(on)

R

L

= 12 mA

= 10 Ω

†

I

= -12 mA

B(off)

= 20 µs, dc ≤ 2%

t

p

AUGUST 1993 - REVISED MARCH 1997

MIN TYP MAX UNIT

1 µs

PRODUCT INFORMATION

3