Power Innovations BDW63D, BDW63C, BDW63B, BDW63A, BDW63 Datasheet
● Designed for Complementary Use with
BDW64, BDW64A, BDW64B, BDW64C and
BDW64D
BDW63, BDW63A, BDW63B, BDW63C, BDW63D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997 Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 60 W at 25°C Case Temperature
1
2
3
● 6 A Continuous Collector Current
● Minimum h
of 750 at 3 V, 2 A
FE
B
C
E
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BDW63
BDW63A
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Operating temperature range T
Operating free-air temperature range T
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0)
E
= 0) (see Note 1)
B
= 0, RS = 0.1 Ω, VCC = 20 V.
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
V
V
CBO
CEO
EB
C
B
tot
tot
stg
A
C
j
2
B(on)
MDTRACA
45
60
80
100
120
45
60
80
100
120
5 V
6 A
0.1 A
60 W
2 W
50 mJ
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
= 5 mA, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDW63, BDW63A, BDW63B, BDW63C, BDW63D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
BE(on)
V
CE(sat)
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
EC
forward voltage
= 30 mA IB = 0 (see Note 5)
I
C
V
= 30 V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CE
V
= 45 V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 5 V IC= 0 2 mA
V
EB
VCE = 3 V
= 3 V
V
CE
= 3 V IC= 2 A (see Notes 5 and 6) 2.5 V
V
CE
IB = 12 mA
= 60 mA
I
B
= 6 A IB = 0 3.5 V
I
E
I
B
I
B
I
B
I
B
I
B
I
E
I
E
I
E
I
E
I
E
I
E
I
E
I
E
I
E
I
E
I
C
I
C
I
C
I
C
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 2 A
= 6 A
= 2 A
= 6 A
T
= 150°C
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
(see Notes 5 and 6)
(see Notes 5 and 6)
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
45
60
80
100
120
750
100
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
5
5
5
5
5
20000
2.5
4
V
mA
mA
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 2.08 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = 3 A
t
on
t
Turn-off time 5 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= -4.5 V
I
B(on)
R
L
= 12 mA
= 10 Ω
†
I
= -12 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
PRODUCT INFORMATION
2
MIN TYP MAX UNIT
1 µs
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