Power Innovations BDW53D, BDW53C, BDW53B, BDW53A, BDW53 Datasheet
● Designed for Complementary Use with
BDW54, BDW54A, BDW54B, BDW54C and
BDW54D
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 40 W at 25°C Case Temperature
1
2
3
● 4 A Continuous Collector Current
● Minimum h
of 750 at 3 V, 1.5 A
FE
B
C
E
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BDW53
BDW53A
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Operating temperature range T
Operating free-air temperature range T
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0)
E
= 0) (see Note 1)
B
= 0, RS = 0.1 Ω, VCC = 20 V.
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
V
V
CBO
CEO
EBO
C
B
tot
tot
stg
A
C
j
2
B(on)
MDTRACA
45
60
80
100
120
45
60
80
100
120
5 V
4 A
50 mA
40 W
2 W
25 mJ
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
= 5 mA, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
BE(on)
V
CE(sat)
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
EC
forward voltage
= 30 mA IB = 0 (see Note 5)
I
C
V
= 30 V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CE
V
= 45 V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 5 V IC= 0 2 mA
V
EB
VCE = 3 V
= 3 V
V
CE
= 3 V IC= 1.5 A (see Notes 5 and 6) 2.5 V
V
CE
IB = 30 mA
= 40 mA
I
B
= 4 A IB = 0 3.5 V
I
E
I
= 0
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
I
= 1.5 A
C
= 4 A
I
C
I
= 1.5 A
C
= 4 A
I
C
T
= 150°C
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
(see Notes 5 and 6)
(see Notes 5 and 6)
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
45
60
80
100
120
750
100
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
5
5
5
5
5
20000
2.5
4
V
mA
mA
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 3.125 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = 2 A
t
on
t
Turn-off time 4.5 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= -5 V
I
B(on)
R
L
= 8 mA
= 15 Ω
†
I
= -8 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
PRODUCT INFORMATION
2
MIN TYP MAX UNIT
1 µs
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