Power Innovations BDV65C, BDV65B, BDV65A, BDV65 Datasheet
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
● Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
● 125 W at 25°C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
● 12 A Continuous Collector Current
● Minimum h
of 1000 at 4 V, 5 A
FE
C
E
Pin 2 is in electrical contact with the mounting base.
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BDV65
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
E
= 0)
= 0)
B
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
V
V
CBO
CEO
EBO
C
CM
B
tot
tot
j
stg
L
MDTRAA
60
80
100
120
60
80
100
120
5 V
12 A
15 A
0.5 A
125 W
3.5 W
-65 to +150 °C
-65 to +150 °C
260 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDV65
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Parallel diode
EC
forward voltage
= 30 mA IB = 0 (see Note 4)
I
C
V
= 30 V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
V
= 60 V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 5 V IC= 0 5 mA
V
EB
= 4 V IC= 5 A (see Notes 4 and 5) 1000
V
CE
= 20 mA IC= 5 A (see Notes 4 and 5) 2 V
I
B
= 4 V IC= 5 A (see Notes 4 and 5) 2.5 V
V
CE
= 10 A IB = 0 (see Notes 4 and 5) 3.5 V
I
E
I
= 0
B
= 0
I
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
T
= 150°C
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
60
80
100
120
0.4
0.4
0.4
0.4
V
2
2
mA
2
2
mA
2
2
2
2
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 1 °C/W
θJC
Junction to free air thermal resistance 35.7 °C/W
θJA
PRODUCT INFORMATION
2
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