Power Innovations BDT60C, BDT60B, BDT60A, BDT60 Datasheet
● Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
● 50 W at 25°C Case Temperature
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 4 A Continuous Collector Current
● Minimum h
of 750 at 1.5 V, 3 A
FE
B
C
E
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BDT60
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
Operating junction temperature range T
Storage temperature range T
Operating free-air temperature range T
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
E
= 0)
= 0)
B
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
V
V
CBO
CEO
EBO
C
B
tot
tot
j
stg
A
MDTRACA
-60
-80
-100
-120
-60
-80
-100
-120
-5 V
-4 A
-0.1 A
50 W
2 W
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BDT60
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(on)
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
EC
forward voltage
= -30 mA IB = 0 (see Note 3)
I
C
V
= -30 V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CE
V
= -60 V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -5 V IC= 0 -5 mA
V
EB
= -3 V IC= -1.5 A (see Notes 3 and 4) 750
V
CE
= -6 mA IC= -1.5 A (see Notes 3 and 4) -2.5 V
I
B
= -3 V IC= -1.5 A (see Notes 3 and 4) -2.5 V
V
CE
= -1.5 A IB = 0 -2.0 V
I
E
I
= 0
B
= 0
I
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
T
= 150°C
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
V
mA
mA
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 2.5 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = -2 A
t
on
t
Turn-off time 4.5 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= 5 V
I
B(on)
R
L
= -8 mA
= 20 Ω
†
I
= 8 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
PRODUCT INFORMATION
MIN TYP MAX UNIT
1 µs
2
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