Power Innovations BD899A, BD897A, BD895A Datasheet
● Designed for Complementary Use with
BD896A, BD898A and BD900A
● 70 W at 25°C Case Temperature
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 8 A Continuous Collector Current
● Minimum h
of 750 at 3V, 3A
FE
B
C
E
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD895A
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage V
Continuous collector current I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
Operating free-air temperature range T
Operating junction temperature range T
Storage temperature range T
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
E
= 0)
= 0)
B
BD897A
BD899A
BD895A
BD897A
BD899A
V
V
CBO
CEO
EBO
C
B
tot
tot
A
j
stg
MDTRACA
45
60
80
45
60
80
5 V
8 A
0.3 A
70 W
2 W
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD895A, BD897A, BD899A
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(on)
V
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
EC
forward voltage
= 100 mA IB = 0 (see Note 3)
I
C
V
= 30 V
CE
= 30 V
V
CE
= 40 V
V
CE
V
= 45 V
CB
= 60 V
V
CB
= 80 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 5 V IC= 0 (see Notes 3 and 4) 2 mA
V
EB
= 3 V IC= 4 A (see Notes 3 and 4) 750
V
CE
= 16 mA IC= 4 A (see Notes 3 and 4) 2.8 V
I
B
= 3 V IC= 4 A (see Notes 3 and 4) 2.5 V
V
CE
= 8 A IB = 0 3.5 V
I
E
I
= 0
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
T
= 100°C
C
= 100°C
T
C
= 100°C
T
C
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
45
60
80
0.5
0.5
0.5
0.2
0.2
0.2
V
mA
mA
2
2
2
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 1.79 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = 3 A
t
on
t
Turn-off time 5 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= -3.5 V
I
B(on)
R
L
= 12 mA
= 10 Ω
†
I
= -12 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
MIN TYP MAX UNIT
1 µs
PRODUCT INFORMATION
2
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