Power Innovations BD651, BD647, BD645 Datasheet
● Designed for Complementary Use with
BD646, BD648, BD650 and BD652
● 62.5 W at 25°C Case Temperature
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 8 A Continuous Collector Current
● Minimum h
of 750 at 3 V, 3 A
FE
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD645
Collector-base voltage (I
Collector-emitter voltage (I
E
= 0)
= 0)
B
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.
V
BE(off)
BD647
BD649
BD651
BD645
BD647
BD649
BD651
V
V
CBO
CEO
EBO
C
CM
B
tot
tot
stg
L
C
j
2
B(on)
MDTRACA
80
100
120
140
60
80
100
120
5 V
8 A
12 A
0.3 A
62.5 W
2 W
50 mJ
-65 to +150 °C
-65 to +150 °C
260 °C
= 5 mA, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD645
V
(BR)CEO
I
CEO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
= 30 mA IB = 0 (see Note 5)
I
C
V
= 30 V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CE
V
= 60 V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 70 V
V
CB
= 5 V IC= 0 (see Notes 5 and 6) 5 mA
V
EB
= 3 V IC= 3 A (see Notes 5 and 6) 750
V
CE
IB = 12 mA
= 50 mA
I
B
= 50 mA IC= 5 A (see Notes 5 and 6) 3 V
I
B
= 3 V IC= 3 A (see Notes 5 and 6) 2.5 V
V
CE
I
= 0
B
= 0
I
B
= 0
I
B
= 0
I
B
I
= 0
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
I
= 3 A
C
= 5 A
I
C
T
= 150°C
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
(see Notes 5 and 6)
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
60
80
100
120
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
2.5
V
mA
mA
2
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 2.0 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
PRODUCT INFORMATION
2
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