Power Innovations BD539D, BD539C, BD539B, BD539A, BD539 Datasheet
● Designed for Complementary Use with the
BD540 Series
● 45 W at 25°C Case Temperature
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 5 A Continuous Collector Current
● Up to 120 V V
CEO
rating
B
C
E
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD539
BD539A
Collector-base voltage
Collector-emitter voltage (see Note 1)
Emitter-base voltage V
Continuous collector current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Operating free air temperature range T
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
BD539B
BD539C
BD539D
BD539
BD539A
BD539B
BD539C
BD539D
V
V
CBO
CEO
EBO
C
tot
tot
A
j
stg
L
MDTRACA
40
60
80
100
120
40
60
80
100
120
5 V
5 A
45 W
2 W
-65 to +150 °C
-65 to +150 °C
-65 to +150 °C
260 °C
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD539
BD539A
BD539B
BD539C
BD539D
BD539
BD539A
BD539B
BD539C
BD539D
BD539/539A
BD539B/539C
BD539D
(see Notes 4 and 5)
(see Notes 4 and 5)
V
(BR)CEO
I
CES
I
CEO
I
EBO
h
V
CE(sat)
V
BE(on)
h
|hfe|
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
fe
current transfer ratio
Small signal forward
current transfer ratio
= 30 mA
I
C
IB = 0
(see Note 4)
V
= 40 V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
CE
= 120 V
V
CE
V
= 30 V
CE
= 60 V
V
CE
= 90 V
V
CE
= 5 V IC= 0 1 mA
V
EB
V
= 4 V
CE
= 4 V
V
CE
= 4 V
V
CE
I
= 125 mA
B
= 375 mA
I
B
= 1 A
I
B
= 4 V IC= 3 A (see Notes 4 and 5) 1.25 V
V
CE
= 10 V IC= 0.5 A f = 1 kHz 20
V
CE
= 10 V IC= 0.5 A f = 1 MHz 3
V
CE
V
BE
V
BE
V
BE
V
BE
V
BE
I
B
I
B
I
B
I
C
I
C
I
C
I
C
I
C
I
C
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0
= 0.5 A
= 1 A
= 3 A
= 1 A
= 3 A
= 5 A
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
40
60
80
100
120
40
30
12
0.2
0.2
0.2
0.2
0.2
0.3
0.3
0.3
0.25
0.8
1.5
V
mA
mA
V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 2.78 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = 1 A
t
on
t
Turn-off time 2 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= -4.3 V
I
B(on)
= 30 Ω
R
L
= 0.1 A
†
I
= -0.1 A
B(off)
= 20 µs, dc ≤ 2%
t
p
PRODUCT INFORMATION
MIN TYP MAX UNIT
0.5 µs
2
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