Power Innovations BD241F, BD241E, BD241D Datasheet
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
SEPTEMBER 1981 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
● 40 W at 25°C Case Temperature
● 3 A Continuous Collector Current
● 5 A Peak Collector Current
● Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, RBE = 100 Ω,
V
BE(off)
= 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (R
BE
= 100 Ω)
BD241D
BD241E
BD241F
V
CER
160
180
200
V
Collector-emitter voltage (I
B
= 0)
BD241D
BD241E
BD241F
V
CEO
120
140
160
V
Emitter-base voltage V
EBO
5 V
Continuous collector current I
C
3 A
Peak collector current (see Note 1) I
CM
5 A
Continuous base current I
B
1 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
40 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
2 W
Unclamped inductive load energy (see Note 4) ½LI
C
2
32 mJ
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
250 °C
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
2
SEPTEMBER 1981 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
IB = 0
BD241D
BD241E
BD241F
120
140
160
V
I
CES
Collector-emitter
cut-off current
V
CE
= 160 V
V
CE
= 180 V
V
CE
= 200 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD241D
BD241E
BD241F
0.2
0.2
0.2
mA
I
CEO
Collector cut-off
current
V
CE
= 90 V IB= 0 0.3 mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V IC= 0 1 mA
h
FE
Forward current
transfer ratio
VCE = 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 3 A
(see Notes 5 and 6)
25
5
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 750 mA IC= 3 A (see Notes 5 and 6) 2.5 V
V
BE
Base-emitter
voltage
V
CE
= 4 V IC= 3 A (see Notes 5 and 6) 1.8 V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V IC= 0.5 A f = 1 kHz 20
|hfe|
Small signal forward
current transfer ratio
V
CE
= 10 V IC= 0.5 A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 3.125 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
on
Turn-on time IC = 1 A
V
BE(off)
= -3.7 V
I
B(on)
= 0.1 A
R
L
= 20 Ω
I
B(off)
= -0.1 A
t
p
= 20 µs, dc ≤ 2%
0.3 µs
t
off
Turn-off time 1 µs
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