Power Innovations BD239C, BD239B, BD239A, BD239 Datasheet
● Designed for Complementary Use with the
BD240 Series
● 30 W at 25°C Case Temperature
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
TO-220 PACKAGE
(TOP VIEW)
● 2 A Continuous Collector Current
● 4 A Peak Collector Current
● Customer-Specified Selections Available
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD239
Collector-emitter voltage (R
Collector-emitter voltage (I
= 100 Ω)
BE
= 30 mA)
C
Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Unclamped inductive load energy (see Note 4) ½LI
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
= 0, RS = 0.1 Ω, VCC = 20 V.
V
BE(off)
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
V
V
CER
CEO
EBO
C
CM
B
tot
tot
stg
L
C
j
2
B(on)
MDTRACA
55
70
90
115
45
60
80
100
5 V
2 A
4 A
0.6 A
30 W
2 W
32 mJ
-65 to +150 °C
-65 to +150 °C
250 °C
= 0.4 A, RBE = 100 Ω,
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD239
V
(BR)CEO
I
CES
I
CEO
I
EBO
h
V
CE(sat)
V
h
|hfe|
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
FE
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
BE
voltage
Small signal forward
fe
current transfer ratio
Small signal forward
current transfer ratio
= 30 mA
I
C
IB = 0
(see Note 5)
V
= 55 V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
V
CE
VCE= 30 V
= 60 V
V
CE
= 5 V IC= 0 1 µA
V
EB
VCE = 4 V
= 4 V
V
CE
= 0.2 A IC= 1 A (see Notes 5 and 6) 0.7 V
I
B
= 4 V IC= 1 A (see Notes 5 and 6) 1.3 V
V
CE
= 10 V IC= 0.2 A f = 1 kHz 20
V
CE
= 10 V IC= 0.2 A f = 1 MHz 3
V
CE
V
BE
V
BE
V
BE
V
BE
I
B
I
B
I
C
I
C
= 0
= 0
= 0
= 0
= 0
= 0
= 0.2 A
= 1 A
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
BD239/239A
BD239B/239C
(see Notes 5 and 6)
45
60
80
100
40
15
0.2
0.2
0.2
0.2
0.3
0.3
V
mA
mA
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
R
Junction to case thermal resistance 4.17 °C/W
θJC
Junction to free air thermal resistance 62.5 °C/W
θJA
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
Turn-on time IC = 200 mA
t
on
t
Turn-off time 0.8 µs
off
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
V
BE(off)
= -3.4 V
I
B(on)
= 150 Ω
R
L
= 20 mA
†
I
= -20 mA
B(off)
= 20 µs, dc ≤ 2%
t
p
MIN TYP MAX UNIT
0.3 µs
PRODUCT INFORMATION
2
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