Powerex T727__35 Data Sheet
Symbol
Other lead code
options available
cpO
cpO,
cpO,
H
cpJ
J,
L
N
Creep
Strike
(In
Finish--Nickel
Approx.
1,
Inches
Min.
2.250
1.333
2.030
1.020
7.75
Distance-1.00
Distance-.69
accordance
Weight-8
Dimension
Max.
2.290
1.343
2.090
1.060
.135
.145
.075
.090
8.50
.040
in.
min.
in.
min.
with
NEMA
Plate.
oz.
(227
"H"
is
a clamped dimension.
Millimeters
Min.
57.15
33.86
51.56
25.91
196.85
(25.40
(17.53
mm).
standards.)
g).
3.43
1.91
1.02
mm).
Max.
58.17
34.11
53.09
26.92
3.68
2.29
215.90
Features:
•
Center
fired
di/dt
with
frequency
waveform
dynamic
switching
Guarantee
di/namic
soft
operation
waveform
forward
losses at
•
High
•
High
•
Sinusoidal
•
Rectangular
•
Low
•
Low
•
Lifetime
Ordering Information
Example
Obtain
selecting
optimum
proper
device
Order
gate
gate
control
operation
operation
voltage
high
performance
Code.
to
20KHz
to
20KHz
drop
frequency
for
your
Applications:
•
Inverters
UPS
Induction
AC
•
Cycloconverters
•
Choppers
•
Crowbars
application
motor
by
heating
drives
Type
IGT =
T727
150
rated
at
rna, tq =
350
30
A average
Jlsec
max.
and
with
V
standard
DRM
::.c
900V.
control
leads-order
as:
*Ior
consult
15
and
20
/lsec
factory
V F data,
Westinghouse Electric
Corporation.
Semiconductor Division
..
Youngwood, Pa.
15697
307
Voltage
Blocking
State
Maximums
Repetitive peak
Repetitive
Non·repetitlve
t<
Forw;':d
Reverse
Current
Conducting
(TJ
=
RMS
forward
Ave.
forward
One-half cycle surge
2
1
t
for
A2
sec. -
Forward voltage drop
andTJ=25'C.V
Min.
repetitive
Switching
IT
=
J
Max.
TJ = 125'C,
A/p.sec. reapplied
20V/J.lsec linear to
Typ. turn-on-time,
Vo
Min.
TJ =
Min.
Gate
Maximum
ITJ=25'C)
Gate current to
Gate voltage to
Non·triggering
and rated V
Peak
Peak
Peak
Average
Thermal
Min.,
Min.,
Max.
Max.
Case to
o Consult
o Applies
CD
Per JEOEC RS-397, 5.2.2.1.
CD
With,recommended
CD
Higher
CD
Per JEOEC standard RS-397,
o For operation
forward
peak
reverse
transient
5.0 msec, V
leakage current,
leakage
current.
State
125°C)
fusing
turn-off
=
critical
di/dt
forward
reverse
gale
Maximums
current, A
current, A ........
Ifor
at
......
di/dt
25°C)
time.
diR/dt = 25
300V
0,
dv/dt.
125'C,
non·repetitive,
A/J.lsec
Parameters
trigger
trigger
gate voltage.
ORM
gate
gate
power.
gate
power.
times>
V/p.sec0CD
and
Max.
oper.
Max.
mounting
Thermal
junction
storage
torque.
rRsistance
Junction
sink.
lubricated.
recommended
for
zero or
dv/dt
I TM =
p.sec
Watts
ratings
(i)
ITJ
:7
blocking
voltage
peak
...................
reverse
mA
peak
rnA
peak
........
current0. A ..
8.3 ms}
625
A
.
A/p.sec
IT = 400A
dv/dt
=
0.8
VORM,I'
IT = l000A
.
exponential to V
...........
CI,\
CD
CD'
at
Vo
=
at
Vo = 12V.
TJ = 125'C,
' V
........
current,
A
voltage,
V
Watts
Mechanical
temp
..
QC
in
lb.
CD
1::
Double
case,
QC/Watt
QC/Walt
mounting
negative
gate drive.
available,
anti
parallel diode,
..
temp
to
with
125°CI
voltage
• V
.........
.........
.
.
12V,
.
t.lC
.
gate
consult
5.2.2.6.
,V
voltage.
(i)CDCD
CD CD
sec
...
'
ORM
mA
V
...
side
cooled
...
procedures.
bias.
consult
.
.
.
Symbol
IT(rms)
IT(av)
ITSM
2
1
V
di/dt
Symbol
tq
.
di/dt
Symbol
IGT
V
VGOM
I
V
PGM
PGlav}
Symbol
TJ
Tstg
RSJC
A SCS
factory.
Symbol
V
VRRM
V
IORM
IRRM
t
TM
ton
dv/dt
GT
GTM
GRM
factory.
ORM
RSM
100
100
200
•
4
T727--36
205,000
15t060
3.0
300
800
150
3
0.15
4
5
16
3
-40
to
-40
to -1-150
2000
to
.06
.02
200
200
300
7000
·(·125
2400
660
350
1.65
300
300
300
400
500
400
400
500
500
600
Maximum
7
l!!
"i5
>
6
::i
f-
>
ci
5
0
0
Ql
4
01
~
'0
>
3
1::
'"
~
2
0
u.
E
::0
E
'x
'"
:2
10
Forward
oj
UI
U
'"
0
f0-
e:
0
.04
·u
e:
::0
"')
Ql
U
e:
'0
'"
Ql
E~·02
=~
§P-
Ql
•
.c:
'"
t-
E:.
Uct>
ON
lime. t.
600
600
700
30
30
Current,
Transient
Seconds
700
700
800
Forward
W
I~
100
Thermal
900
800
800
900
Voltage
11
J
~
1Id~Jb"
1000 1100
900
1000 1100
1000 1100
Orop
VS
III
T727_
.35
1200
Forward
V
/V
ITM, Peak
1,000
Amperes
Impedance
VS.
Time
1200
120011400
1300
Current
10,000
'1400
1500
~
•
100,000
308
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