T62
*Other lead code options available
Outline
Features:
• Center fired
• High
di/dt
• High
frequency
• Sinusoidal
• Rectangular
•
Low
dynamic
•
Low
switching
di/namic
with
soft
operation
waveform
waveform
forward
losses at
gate
gate
control
operation
operation
voltage drop
high
to
20
KHz
to
20
frequency
KHz
Symbol
q,O
q,O,
q,O,
H
q,J
J,
L 7.75
N
Creep
Strike
(In
Fini'sh-Nickel
Approx.
1. Dimension
Inches
Min. Max.
1.610 1.650 40.89
.745
1.420 1.460
.500 .560 12.70
.135 .145
.072 .082 1.83
.030 .76
Distance-.34
Distanc8-,26
accordance
with
Plate.
Weight-2.3 oz.
"H"
Applications:
• Inverters
• Choppers
•
Crowbars
Ups
Induction
Motor
Control
for
Millimeters
Min.
.755 18.92
36.07
3.43
196.85
8.50
in. min. (8.64 mm),
in. min. (6.60 mm).
NEMA
standards.)
(66
g).
is clamped dimension.
Heating
Max.
41.91
19.18
37.08
14.22
3.68
2.08
215.90
Ordering
Example
Obtain
optimum
selecting
Information
device
Order
performance
Code.
proper
Westinghouse
Electric
Type
for
your
application
by
I GT =
T627
150 m a.
Corporation • Semiconductor
rated at
tq =
250A
20
p'sec
average
max.
and
with
flex
Division • Youngwood,
VORM = 1000V.
leads -
order
Pa.
15697
as:
303
Voltage
Blocking
Siale
Repetitive peak
Repetitive
Nonwrepetitive
Forward
Reverse
Current
Conducting
tTJ =
RMS
Ave.
One-half
I
Forward
Min,
Switching
peak
t:::;
5,0
msec, V
leakage
leakage
125'C)
forward
forward
cycle
't
for
fusing
A2
sec.
voltage
and
TJ = 25'C,
repelitive
(TJ =
25'C)
Max.
turn-off
TJ = 125'C,
A/lLsec,
reapplied
20V/l'sec,0
Typ,
turn-an-time,
VO=
100V@,
Min,
critical
TJ =
125'C,
Min,
di/dt
Gate
Maximum
(T
Gate
Gate
Non-triggering
Peak
Peak
Peak
Average
25'C)
=
J
current
voltage
and rated V
forward
reverse
gate
power.
gate
Parameters
State
Thermal
Min
..
Max.
Min., Max.
Min
Max,
CD
CD
CD
CD
CD
CD
CD
oper.
storage
..
Max,
Mounting
thermal
Junction
Case
to
sink.
Consult
recommended
Applies
for
Per JEOEC
With!recommended
Higher
dv/dt
Per JEDEC
For
operation
Maximums
forward
reverse
transient
current,
current.
Maximums
current,
current, A .. , .....
surge current@, A . ,
(for
drop
di/dt@,
time,
diR/dt = 12:5
linear
dv/
dt,
V/ILsec@0",.""",
A/I'sec o CD
to
trigger
to
trigger
gate voltage,
ORM
gate
gate
power,
and
junction
resistance,
to
case,
lubricated,
zero
RS-397,
ratings
standard
with
CD
blocking
voltage
peak
..
times>
V . , , , , , , . , ,
IT
IT = 100A
ILsec
current,
voltage,
Watts
reverse
, ,
...
, , , , , , , , . , , . , , , , V
mA
rnA
peak
A , , , , , . , . ,
8,3
-
at
ITM = 625A
A/lLsecCD@@
=150A,
dv/dt
=
to
0,8
VORM,I'
"",.
exponential
CD
""
at
Vo = 12V,
at
Vo = 12V,
TJ = 125'C,
' V , , , , ' , , , , , , , , , , ,
A
V
Watts
Mechanical
temp.,
temp
..
°C
Force,
Ib,CD
Oouble side cooled
DC/Watt
DC/Watt
mounting
or
negative
5,2,2,1,
gate
drive,
available,
RS-397,
antiparallel
ITJ
:0
voltage
• V
peak ,
ms)
CD
to
°C
gate
consult
5,2,2,6,
diode,
125'C)
,V
.........
vol
tage,
..
",.",
.
sec.'
V
'
ORM
mA
V
.
procedures,
bias,
factory.
consult
Symbol
V
.
VRRM
IORM
IRRM
Symbol
IT(rms)
IT(av)
I
TSM
12t.
VTM
di/dl
Symbol
tq
Ion
dv/dt
di/dt
Symbol
IGT
V
GT
VGOM
IGTM
V
GRM
PGM
PG(av)
Symbol
TJ
Tslg
factory,
700
800
100
200
300
400
500
ORM
100
200
300
400
200
300
400
25
!!l
'0
>
::i
>
Ii
e
0
Ql
Cl
S
'0
>
1:
'"
~
0
u.
E
::>
E
'x
'"
::E
500
7
6
5
4
3
2
10
.10
,08
,(001 ,(X)1
RSM
~<------------------25-----------------------+
~<-------------------25
T627
__
400
250
4500
84,000
1,85
300
10
to
50
3,5
300
800
150
3
0,15
4
5
16
3
-4010+125
-40to+150
1000
to
1400
,08
,02
600
500
600
700
600
700
800
Maximum
Forward
Voltage VS,
!
I
Forward
Current,
Transient Thermal Impedance vs.
!
I
,
, '
,
,
,
I
I;
II,
I
I
I
I
'I
III
I
TIme, t.
Seconds
ITM, Peak
II
II
"
II
,
Ii
I
iii
J
II
III
IIII
II
!l
jJ.l.
100
,
800
900
II
I:IT'J,;
-
' I
i I
i
I
,01
900
900
1000
Forward
12150lC
...
~
Amperes
I
,
Ii
!
ii
I
I
I
;,
I'!
I
,l/
I
,1
1100 1200
1000
1100
1000
1100 1200 1300
Current
627_..25
V
1-
1000
lime
I
,
i
I'
I
I
i
I
I
;
II
I
,V
;
bl
1200
)
1-1'
.....
..,..
i
:0<
Ii
10,000
100
304