MITSUBISHI FAST RECOVERY DIODE MODULE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH POWER, HIGH SPEED SWITCHING USE
HVDi (High Voltage Diode) Module
RM600DY-66S
APPLICATION
3-level inverters, 3-level converters, DC choppers.
RM600DY-66S
INSULATED TYPE
● IDC ...............................................................600A
● V
RRM .................................................... 3300V
● Insulated type
● 2-element in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
57 ± 0.25 57 ± 0.25
K1
A1
114
C
E
G
E
C
61.5
18
K2
A2
C
4-M8 NUTS
20
40
E
124 ± 0.25
6-φ7 MOUNTING HOLES
140
A1
(E)
(E)
A2
CIRCUIT DIAGRAM
15
K1
K2
(C)
(C)
38
5
LABEL
30
Aug.1998
MITSUBISHI FAST RECOVERY DIODE MODULE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH POWER, HIGH SPEED SWITCHING USE
RM600DY-66S
HVDi (High Voltage Diode) Module
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol Parameter
VRRM
VDRM
VR(DC)
Symbol Parameter Conditions UnitRatings
I
DC
IFMS
2
I
t
Tj
Tstg
Viso
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC current
Surge (non-repetitive) forward current
I2t for fusing
Junction temperature
Storage temperature
Isolation Voltage
Mounting torque
—
Weight
—
T
C =25°C
1 cycle of half wave 60Hz, peak value, T
V
RM = 0V
Value of one cycle surge current,
t
W = 8.3ms, Tj = 25°C start
—
—
Main terminal to case, 60Hz, sinusoidal, AC, 1min, rms
Main terminals screw : M6
Mounting screw : M6
Typical value
Voltage class
66
3300
3300
2200
j = 25°C start,
9.60 ✕ 10
–40 ~ +150
–40 ~ +125
6.67 ~ 8.24
2.84 ~ 3.43
INSULATED TYPE
600
4800
4
6000
N · m
N · m
1.5
Unit
V
V
V
A
A
2
A
°C
°C
V
kg
s
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
RRM
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Termal resistance
Contact thermal resistance
Parameter Test conditions
VRRM applied, VRM = VRRM
IFM = 600A, tW ≤ 1ms
I
FM = 600A, diF/dt = –1200A/µs,
V
R = 1650V
Junction to case (Per 1/2 module)
Case to fin, thermal grease applied (Per 1/2 module)
Limits
Min Typ Max
—
—
—
—
—
—
—
3.30
—
150
—
0.024
4.29
1.20
—
0.048
—
Unit
mA
4
V
µs
µC
°C/W
°C/W
Aug.1998