POWEREX RM50HG-12S Datasheet
Dimension Inches Millimeters
A1.02±0.02 26.0±0.5
B 0.81 Max. 20.5 Max.
C 0.79 Min. 20.0 Min.
D 0.24±0.008 6.0±0.2
E 0.214±0.012 5.45±0.3
F 0.20±0.012 5.0±0.3
G 0.214±0.012 Dia. Dia. 3.2±0.2
H 0.12±0.012 3.0±0.3
J 0.10±0.012 2.5±0.3
K 0.10 2.5
L 0.08±0.012 2.0±0.3
M 0.04±0.008 1.0±0.2
N 0.02±0.008 0.6±0.2
Description:
Powerex Super Fast Recovery
Diodes are designed for use in
applications requiring fast
switching.
Features:
M Non-Isolated Package
M Planar Chips
M trr= 200 ns Max.
Applications:
M Snubber Circuits
M Switching Power Supplies
M Free Wheeling
Ordering Information:
Select the complete eight digit
part number you desire from
the table below.
Example: RM50HG-12S is a
600 Volt, 50 Ampere Super Fast
Recovery Single Diode.
Current Rating Voltage
Type Amperes Volts (x50)
RM 50 12
D-3
Powerex,Inc., 200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (724) 925-7272
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
RM50HG-12S
Outline Drawing
RM50HG-12S
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
FB
D
G - DIA.
L
2
3
1
E
E
A
K
C
J
M
H
N
1
3
2
4
D-4
Powerex,Inc., 200 Hillis Street,Youngwood,Pennsylvania 15697-1800 (724) 925-7272
RM50HG-12S
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
Absolute Maximum Ratings
Characteristics Symbol Conditions RM50HG-12S Units
Peak Forward Blocking Voltage V
DRM
— 600 Volts
Peak Reverse Blocking Voltage (Non-Repetitive) V
RRM —
720 Volts
DC Reverse Blocking Voltage V
R(DC)
— 480 Volts
DC Current, TC= 80°C (Resistive Load) I
F(DC)
— 50 Amperes
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) I
FSM
— 1000 Amperes
I2t for Fusing, (8.3 milliseconds) I2t——A
2
sec
Storage Temperature T
STG
— -40 to 125 °C
Operating Temperature T
j
— -40 to 150 °C
Maximum Mounting Torque M3 Mounting Screw — — 10 kg.-cm.
Weight (Typical) ——10 Grams
Electrical and Thermal Characteristics,Tj= 25°C unless otherwise specified
Characteristics Symbol Test Conditions RM50HG-12S Units
Blocking State Maximums
Reverse Leakage Current, Peak I
RRM
V
RRM applied, Tj
= 150°C 1.0 mA
V
RRM applied, Tj
= 25°C 0.1 mA
Conducting State Maximums
Forward Voltage Drop V
FM
Tj= 25°C, IFM= 200A 4.0 Volts
Switching Minimums
Reverse Recovery Time t
rr
Tj= 25°C, IFM= 100A 0.2 ms
Reverse Recovery Charge Q
rr
di/dt = -1000A/ms, V
R = 300V
— mC
Lead Integrity
— Tension Load: 25 kg 30.0 s
— Bending Load: 1 kg bent to 90° 2.0 times
Thermal Maximums
Thermal Resistance, Junction-to-Case R
u(J-C)
Diode 0.5°C/Watt
Contact Thermal Resistance, Case-to-Fin R
u(C-S)
Case to Fin, Thermal Grease Applied 0.5°C/Watt
*Maximum ratings unless otherwise specified
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