POWEREX QJD0240002 Datasheet
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Power MOSFET Module
400 Amperes/200 Volts
QJD0240002
Description:
Powerex Dual MOSFET Module is
designed specially for customer
applications. The module is isolated
for easy mounting with other
components on a common heatsink.
Features:
Typical RDS(on) = 0.0055Ω
Extremely High dv/td Capability
Fast Body-Drain Diode
Isolated Baseplate for Easy
Heat Sinking
Low Thermal Impedance
Isolated Material: DBC Alumina
(4) STY100NS20FD Chips per
MOSFET Switch
Applications:
High Current, High Speed
Switching
Motor Drive
DC-AC Converter for Welding
Equipment
Switch Mode Power Supply
Dim Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14+0.04/-0.02 29+1.0/-0.5
D
E
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
3.66±0.01 93.0±0.25
1.88±0.01 48.0±0.25
Dim Inches Millimeters
K 0.55 14.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
Preliminary Page 1 7/10/2002
QJD0240002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Power MOSFET Module
400 Amperes/200 Volts
Maximum Ratings, Tj=25°
°C unless otherwise specified
°°
Ratings Symbol QJD0240002 Units
Drain-source voltage, VGS=0V V
Gate-source voltage V
Drain Current at Tc = 25°C
Drain Current at Tc = 100°C
Max Operating Junction Temperature Tj 150
Storage Temperature T
200 Volts
DSS
GSS
I
400 Amperes
D
I
252 Amperes
D
±20
Volts
°C
-40 to 125
stg
°C
Mounting Torque, M6 Terminal Screws - 40 In-lb
Mounting Torque, M6 Mounting Screws - 40 In-lb
Module Weight (Typical) - 400 Grams
V Isolation V
2000 Volts
RMS
Static Electrical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltage V
Drain leakage current I
Drain leakage current at Tc = 125°C
Gate leakage current I
Gate-source threshold voltage V
Drain-source on state resistance R
Drain-source on-state voltage V
Forward On Voltage MOS Diode VSD ISD=400A, VGS=0V - - 1.6 Volts
°C unless otherwise specified
°°
ID=1mA, VGS=0V 200 - - Volts
(BR)DSS
VDS=200V, VGS=0V - - 40
DSS
I
VDS=200V, VGS=0V - - 400
DSS
GSS
ID=1mA, VDS=10V 3.0 4.0 5.0 Volts
GS(th)
ID=200A, VGS=10V - 5.5 6.0
DS(ON)
ID=200A, VGS=10V - 1.1 1.2 Volts
DS (ON)
V
GS
=±20V,V
DS
=0V
- -
±400
µA
µA
nA
mΩ
Dynamic Electrical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
°C unless otherwise specified
°°
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn on Delay time t
Rise Time tr - TBD - ns
Turn- off Delay Time t
Fall Time tf
Reverse Recovery Time MOS Diode trr - 225 - ns
Reverse Recovery Charge MOS Diode Qrr - 5.4 - µC
Reverse Recovery Current MOS Diode I
- 31600 - pF
iss
- 6000 - pF
oss
rss
- TBD - ns
d(on)
- TBD - ns
d(off)
=25V
V
DS
V
GS
f=1MHz
V
=100V
DD
=200A
I
D
=10V
V
GS
=4.7Ω
R
G
=400A
I
SD
=0V
- 1840 - pF
- TBD - ns
di/dt=400A/µs
=160V
V
DD
RRM
Tj=150°C
- 48 - Amperes
Thermal Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Channel to Case
Contact Thermal Resistance
(Thermal Grease Applied)
Preliminary Page 2 7/10/2002
°C unless otherwise specified
°°
R
θ(ch-c)
R
θCF
Per Mosfet - 0.08 TBD
Per Module - 0.020 -
°C/W
°C/W
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