Powerex QIS4506002 Data Sheet

QIS4506002 Preliminary

C (BASE)

G (2)E (3)

E (1)

E (3)

G (2)

E (1)

C (BASE)

A

F

H

K

Q

P

E

L

J

B

G

M

R

C

N

D

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

HV Single
Discrete IGBT

60 Amperes/4500 Volts

Description:

Powerex Single Non-isolated
Discrete is designed specially for
customer high voltage switching
and pulse power applications.

Features:

 Low Drive Requirement
 Low V

CE(sat)

 Molybdenum Mounting Plate

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 2.35 59.7

B 0.98 25.0

C 1.98 50.3

D 0.197 5.0

E 0.22 5.5

F 0.22 5.6

G 0.465 11.8

H 0.27 6.9

Dimensions Inches Millimeters

J 0.93 23.6

K 0.14 3.6

L 0.20 5.2

M 0.40 1.0

N 0.43 11.0

P 0.20 0.5

Q 0.12 3.0

R 0.208 Dia. 5.3 Dia.

101/10 Rev. 3

Preliminary

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

QIS4506002
HV Single Discrete IGBT

60 Amperes/4500 Volts

Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol QIS4506002 Units

Collector Emitter Voltage V

Gate Emitter Voltage V

Collector Current (DC, TC = 127°C) IC 60 Amperes

Peak Collector Current (Pulsed) ICM 120* Amperes

Junction Temperature Tj -55 to 150 °C

Storage Temperature T

Mounting Torque, M5 Mounting Screws — 30 in-lb

Weight (Typical) — 20 Grams

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

Total Gate Charge QG V

V

CES

V

GES

I

GE(th)

I

CE(sat)

CE

GE

C

= 60A, VGE = 15V, Tj = 25°C — 3.0 3.9** Volts

C

= 60A, VGE = 15V, Tj = 125°C — 3.6 — Volts

C

= 2250V, IC = 60A, VGE = 15V — 450 — nC

CC

= V

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 0.5 µA

GES

= 7mA, VCE = 10V 4.5 6.0 7.5 Volts

4500 Volts

CES

±20 Volts

GES

-55 to 125 °C

stg

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Resistive Turn-on Delay Time t

— 9.0 — nF

ies

V

oes

— 0.2 — nF

res

V

d(on)

= 0V, VCE = 10V — 0.65 — nF

GE

= 2250V, — — 2.4 µs

CC

Load Rise Time tr IC = 60A, — — 2.4 µs

Switching Turn-off Delay Time t

Times Fall Time tf R

Turn-on Switching Energy Eon T

Turn-off switching Energy E

V

d(off)

= 125°C, IC = 60A, VCC = 2250V, — 250 — mJ/P

j

VGE = ±15V, RG = 120Ω, LS = 180nH — 170 — mJ/P

off

= V

GE1

= 15V, — — 6.0 µs

GE2

= 120Ω — — 1.2 µs

G

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Case to Sink R

Thermal Grease Applied

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed device rating.
**Pulse width and repetition rate should be such that device junction temperature rise is negligible.

IGBT — 0.10 TBD °C/W

th(j-c)

λ

th(c-s)

= 1W/mK — 0.10 — °C/W

grease

2

01/10 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

0

100

200

300

400

500

COLLECTOR CURRENT, IC, (AMPERES)

TURN-ON SWITCHING ENERGY, E

on

, (mJ/P)

TURN-ON SWITCHING

ENERGY CHARACTERISTICS

(TYPICAL)

0 25 50 75 100

10

2

10

1

10

0

10

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE CHARACTERISTICS

(TYPICAL)

10

-1

10

0

10

1

10

2

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

6

5

0 25 50 100

4

3

2

1

0

VGE = 15V

T

j

= 25°C

T

j

= 125°C

125

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (VOLTS)

TURN-ON SWITCHING

SAFE OPERATING AREA (RBSOA)

(TYPICAL)

125

0 1000 2000 3000 4000 5000

100

75

50

25

0

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE CHARACTERISTICS

(TYPICAL)

20

0 250 500 750 1000

16

12

8

4

0

VCC = 2250V
V

GE

= 15V

R

G

= 120Ω

L

S

= 180nH

T

j

= 125°C
Inductive Load Integrated
Over Range of 10%

VCC = 3000V
V

GE

= 15V

R

G

= 120Ω

L

S

= 100nH

T

j

= 125°C

V

GE

= 15V

T

j

= 25°C

C

ies

, C

oes

: f = 100kHz

C

res

: f = 1MHz

V

CC

= 2250V

I

C

= 60A

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

10

0 4 8 12 16 20

8

6

4

2

0

Tj = 25°C

Tj = 25°C

0

60

180

300

360

COLLECTOR CURRENT, IC, (AMPERES)

TURN-OFF SWITCHING ENERGY, E

off

, (mJ/P)

TURN-OFF SWITCHING

ENERGY CHARACTERISTICS

(TYPICAL)

0 25 50 75 100

120

240

VCC = 2250V
V

GE

= 15V

R

G

= 120Ω

L

S

= 180nH

T

j

= 125°C
Inductive Load Integrated
Over Range of 10%

75

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTAGE)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

100

75

0 2 4 8

50

25

0

106

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTORCURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

875

625

750

0 4 8 16

500

375

250

125

0

VCE = 10V

T

j

= 25°C

T

j

= 125°C

2012

C

ies

IC = 100A

VGE = 20V

15V

14V

12V

10V

8V

IC = 50A

IC = 25A

C

oes

C

res

QIS4506002
HV Single Discrete IGBT

60 Amperes/4500 Volts

Preliminary

01/10 Rev. 3

3