Powerex QIS4506001 Data Sheet
QIS4506001 Preliminary
B
G
C
A
P
N
L
M
C (BASE)
G (2)E (3)
E (1)
F
K
E (3)
G (2)
E (1)
C (BASE)
H
J
D
E
Q
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Single Discrete IGBT
60 Amperes/4500 Volts
Description:
Powerex Single Non-isolated
Discrete is designed specially for
customer high voltage switching
and pulse power applications.
Features:
Low Drive Requirement
Low V
CE(sat)
Molybdenum Mounting Plate
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 2.11 53.6
B 0.98 25.0
C 2.01 51.0
D 0.2 5.0
E. 0.1 2.5
F 0.27 6.9
G 0.49 12.5
H 0.46 Max. 11.8 Max.
Dimensions Inches Millimeters
J 0.14 3.6
K 0.22 5.7
L 0.43 10.8
M 0.04 1.0
N 0.43 10.9
P 0.02 0.5
Q 0.21 Dia. 5.3 Dia.
101/10 Rev. 3
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QIS4506001
Single Discrete IGBT
60 Amperes/4500 Volts
Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol QIS4506001 Units
Collector Emitter Voltage V
Gate Emitter Voltage V
Collector Current (DC, TC = 127°C) IC 60 Amperes
Peak Collector Current (Pulsed) ICM 120* Amperes
Junction Temperature Tj -55 to 150 °C
Storage Temperature T
Mounting Torque, M5 Mounting Screws — 30 in-lb
Weight (Typical) — 20 Grams
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
Total Gate Charge QG V
V
CES
V
GES
I
GE(th)
I
CE(sat)
CE
GE
C
= 60A, VGE = 15V, Tj = 25°C — 3.0 3.9** Volts
C
= 60A, VGE = 15V, Tj = 125°C — 3.6 — Volts
C
= 2250V, IC = 60A, VGE = 15V — 450 — nC
CC
= V
, VGE = 0V — — 1.0 mA
CES
= V
, VCE = 0V — — 0.5 µA
GES
= 7mA, VCE = 10V 4.5 6.0 7.5 Volts
4500 Volts
CES
±20 Volts
GES
-55 to 125 °C
stg
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
— 9.0 — nF
ies
V
oes
— 0.2 — nF
res
V
d(on)
= 0V, VCE = 10V — 0.65 — nF
GE
= 2250V, — — 2.4 µs
CC
Load Rise Time tr IC = 60A, — — 2.4 µs
Switching Turn-off Delay Time t
Times Fall Time tf R
Turn-on Switching Energy Eon T
Turn-off switching Energy E
V
d(off)
= 125°C, IC = 60A, VCC = 2250V, — 250 — mJ/P
j
VGE = ±15V, RG = 120Ω, LS = 180nH — 170 — mJ/P
off
= V
GE1
= 15V, — — 6.0 µs
GE2
= 120Ω — — 1.2 µs
G
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Case to Sink R
Thermal Grease Applied
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed device rating.
**Pulse width and repetition rate should be such that device junction temperature rise is negligible.
IGBT — 0.10 TBD °C/W
th(j-c)
λ
th(c-s)
= 1W/mK — 0.10 — °C/W
grease
2
01/10 Rev. 3
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