POWEREX QIS0660001 Datasheet
QIS0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Single IGBT H-Series
Hermetic Module
600 Amperes/600 Volts
Description:
Powerex IGBT Hermetic modules are
designed for use in switching applications.
Each Module consists of two IGBT transistors
in a half bridge configuration with each
transistor having a reverse connected super
fast recovery free wheel diode. All
components are located in a hermetically
sealed chamber and are electrically isolated
from the heat sinking base plate, offering
simplified system assembly and thermal
management.
Features:
♦ Low Drive Power
♦ Low V
CE(sat)
♦ Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
♦ High Frequency Operation (20-
25kHz)
♦ Isolated Base plate for Easy Heat
sinking
♦ Fully Hermetic Package
♦ Package Design Capable of Use at
High Altitudes
♦ Package can be modified to adhere
to customer dimensions.
Schematic:
Applications:
♦ AC Motor Control
♦ Motion/Servo Control
♦ Air Craft Applications
Ordering Information:
Contact Powerex Custom Modules
Page 1 PRELIMINARY 05/30/97
QIS0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Single IGBT H-Series
Hermetic Module
600 Amperes/600 Volts
Maximum Ratings, Tj=25°°C unless otherwise specified
Ratings Symbol Units
Collector Emitter Voltage V
Gate Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
V Isolation V
CES
GES
C
CM
FM
FM
d
RMS
600 Volts
±20
Volts
600 Amperes
1200* Amperes
600 Amperes
1200* Amperes
2100 Watts
2500 Volts
Static Electrical Characteristics, Tj=25°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
GE(th)
CES
GES
VCE=V
VCE=0V 0.5
IC=60mA,
VCE=10V
Collector-Emitter Saturation Voltage V
CE(sat)
IC=600A,
VGE=15V
V
CE(sat)
IC=600A,
VGE=15V,
T
=150°C
j
Total Gate Charge Q
G
VCC=300V,
IC=600A,
VGS=15V
Diode Forward Voltage V
FM
IE=600A,
VGS=0V
CES
Min Typ Max Units
1.0 mA
µA
4.5 6.0 7.5 Volts
2.1 2.8 Volts
2.15 Volts
1800 nC
2.8 Volts
Dynamic Electrical Characteristics, Tj=25°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn on Delay time t
Rise Time t
Turn off delay time t
ies
oes
res
d(on)
r
d(off)
VGE=0V 60 nF
VCE=10V 21 nF
f=1MHz 12 nF
VCC=300V nS
IC=600A nS
V
GE1=VGE2
=15
V
Fall Time t
f
RG=1Ω
Diode Reverse Recovery Time trr IE=600A 110 nS
Diode reverse Recovery Charge Qrr diE/dt=
1200A/µS
Min Typ Max Units
nS
300 nS
1.62
µC
Thermal and Mechanical Characteristics, Tj=25°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Thermal Resistance, Junction to
R
θJC
IGBT 0.06
Page 2 PRELIMINARY 05/30/97
Min Typ Max Units
°C/W
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