POWEREX QIR0620001 Datasheet
QIR0620001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 IGBT H-Series
200/300 Amperes/600 Volts
Chopper Module
Description:
Powerex IGBT modules are designed
for use in switching applications. Each
Module consists of one IGBT
transistor and one super fast recovery
diode in a chopper configuration. All
components are encapsulated in a
plastic package are electrically isolated
from the heat sinking base plate,
offering simplified system assembly and
thermal management.
Features:
♦ Low Drive Power
♦ Low V
CE(sat)
♦ Discrete Super-Fast Recovery
(70ns) Diodes
♦ High Frequency Operation (20-
25kHz)
♦ Isolated Base plate for Easy Heat
sinking
Schematic:
D1
D2
Applications:
♦ AC Motor Control
♦ Motion/Servo Control
Ordering Information:
Contact Powerex Custom Modules
Page 1 PRELIMINARY 06/07/97
QIR0620001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 IGBT H-Series
200/300 Amperes/600 Volts
Chopper Module
Maximum Ratings, Tj=25°°C unless otherwise specified
Ratings Symbol Units
Collector Emitter Voltage V
Gate Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current (D1) I
Diode Forward Surge Current (D1) I
Power Dissipation P
V Isolation V
CES
GES
C
CM
FM
FM
d
RMS
600 Volts
±20
Volts
200 Amperes
400* Amperes
300 Amperes
600* Amperes
1100 Watts
2500 Volts
Static Electrical Characteristics, Tj=25°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
GE(th)
CES
GES
VCE=V
VCE=0V 0.5
IC=20mA,
VCE=10V
Collector-Emitter Saturation Voltage V
CE(sat)
IC=200A,
VGE=15V
V
CE(sat)
IC=200A,
VGE=15V,
T
=150°C
j
Total Gate Charge Q
G
VCC=300V,
IC=200A,
VGS=15V
Diode Forward Voltage (D1) V
FM
IE=300A,
VGS=0V
CES
Min Typ Max Units
1.0 mA
µA
4.5 6.0 7.5 Volts
2.1 2.8 Volts
2.15 Volts
600 nC
2.8 Volts
Dynamic Electrical Characteristics, Tj=25°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn on Delay time t
Rise Time t
Turn off delay time t
ies
oes
res
d(on)
r
d(off)
VGE=0V 20 nF
VCE=10V 7 nF
f=1MHz 4 nF
VCC=300V 200 nS
IC=200A 550 nS
V
GE1=VGE2
=15
V
Fall Time t
f
RG=3.1Ω
Diode Reverse Recovery Time trr IE=200A 110 nS
Diode reverse Recovery Charge Qrr diE/dt=-
400A/µS
Min Typ Max Units
300 nS
300 nS
0.54
µC
Thermal and Mechanical Characteristics, Tj=25°°C unless otherwise specified
Characteristic Symbol Test
Conditions
Thermal Resistance, Junction to
R
θJC
Per IGBT 0.16
Page 2 PRELIMINARY 06/07/97
Min Typ Max Units
°C/W
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