POWEREX QIQ1245001 Datasheet
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module
1200V 450A IGBT / 1200V 750A Fast Diode
QIQ1245001
Description:
Powerex Low Side Chopper
IGBT Module is designed
specially for customer applications. The
modules are isolated for easy mounting
with other components on a common
heatsink.
Features:
Low Drive Requirement
Outline Drawing and Circuit Diagram
Dim Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D
E
F 0.83 21.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
3.66±0.01 93.0±0.25
2.44±0.01 62.0±0.25
Dim Inches Millimeters
K 0.55 14.0
M 0.33 8.5
P 0.94 24.0
Q 0.98 25.0
R 0.86 21.75
S M6 M6
T 0.26 Dia. 6.5 Dia.
V 0.02 0.5
W 0.11 2.79
X 1.08 27.35
Low V
Super Fast Diode
(3) F Series 150A 1200V
Trench Gate Chips per IGBT
(5) F Series 150A 1200V
Chips per Diode
Isolated Baseplate for Easy
Heat Sinking
Al
2O3
Low Thermal Impedance
Applications:
Choppers
Welding Power Supplies
n
CE(sat)
DBC Ceramic
Preliminary Page 1 4/22/2002
QIQ1245001
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module
1200V 450A IGBT / 1200V 750A Fast Diode
Maximum Ratings, Tj=25°
°C unless otherwise specified
°°
Ratings Symbol QIQ1245001 Units
Collector- Emitter Voltage (G-E Short) V
Gate- Emitter Vol t age (C-E Short) V
1200 Volts
CES
GES
±20
Volts
Collector Current IC 450 Amperes
Peak Collector Current (Tj<= 150°C) ICM 900* Amperes
Diode Forward Current IFM 750 Amperes
Power Dissipation Pd TBD Watts
Junction Temperature Tj -40 to 150
Storage Temperature T
-40 to 125
stg
°C
°C
Mounting Torque, M6 Terminal Sc rews - 40 In-lb
Mounting Torque, M6 Mounting Screws - 40 In-lb
Module Weight (Typical) - 580 Grams
Isolation Voltage (Main Term i nal t o Baseplate, AC 1 min.) V
2500 Volts
RMS
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Static Electrical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V ol tage V
Collector-Emitter Saturation Voltage V
I
Total Gate Charge QG V
Diode Forward Voltage VFM I
°C unless otherwise specified
°°
VCE=V
CES
VGE=V
GES
IC=45mA, VCE=10V 5.0 6.0 7.0 Volts
GE(th)
IC=450A, VGE=15V - 1.8 2.4 Volts
CE(sat)
=450A, VGE=15V,
C
T
CC
=450A, VGS=15V
I
C
=0V - - 1.0 mA
CES VGE
=0V - - 60
GES VCE
=125°C
j
=600V,
=750A - - 3.2 Volts
F
µA
- 1.9 - Volts
- 4950 - nC
Dynamic Electrical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn on Delay time t
Rise Time tr - - TBD ns
Turn-off Delay Time t
Fall Time tf
Diode Reverse Recovery Time trr - - 250 ns
Diode Reverse Recovery Charge Qrr
°C unless otherwise specified
°°
- - 180 nF
ies
- - 7.6 nF
oes
res
- - TBD ns
d(on)
- - TBD ns
d(off)
Thermal and Mechanical Characteristics, Tj=25°
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resis tance
R
θJC
R
θJC
R
θCF
=0V
V
GE
=10V
V
CE
f=1MHz
V
=600V
CC
=450A
I
C
R
G
I
=750A
F
=15V
=1.0Ω
V
GE1=VGE2
°C unless otherwise specified
°°
- - 4.5 nF
- - TBD ns
- 44.0 -
Per IGBT - 0.075 TBD
Per Diode - 0.052 TBD
Per Module - 0.01 -
µC
°C/W
°C/W
°C/W
Preliminary Page 2 4/22/2002
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